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dc.contributor.authorXue, Fei
dc.contributor.authorHe, Xin
dc.contributor.authorLiu, Wenhao
dc.contributor.authorPeriyanagounder, Dharmaraj
dc.contributor.authorZhang, Chenhui
dc.contributor.authorChen, Mingguang
dc.contributor.authorLin, Chun-Ho
dc.contributor.authorLuo, Linqu
dc.contributor.authorYenge, Emre
dc.contributor.authorTung, Vincent
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorHe, Jr-Hau
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2020-08-12T12:42:48Z
dc.date.available2020-08-12T12:42:48Z
dc.date.issued2020
dc.identifier.doi10.1002/adfm.202004206
dc.identifier.urihttp://hdl.handle.net/10754/664575
dc.description.abstractDue to the potential application in optoelectronic memories, optical control of ferroelectric domain walls has emerged as an intriguing and important topic in modern solid-state physics. However, its device implementation in a single ferroelectric, such as conventional BaTiO3 or PZT ceramic, still presents huge challenges in terms of the poor material conductivity and the energy mismatch between incident photons and ferroelectric switching. Here, using the generation of photocurrent in conductive 𝜶-In2Se3 (a van der Waals ferroelectric) with a two-terminal planar architecture, we report the first demonstration of optical-engineered ferroelectric domain wall in a non-volatile manner for optoelectronic memory application. The 𝜶-In2Se3 device exhibits a large optical-writing and electrical-erasing (on/off) ratio of > 104, as well as multilevel current switching upon optical excitation. The narrow direct bandgap of the multilayer 𝜶-In2Se3 ferroelectric endows the device with broadband optical-writing wavelengths greater than 900 nm. In addition, photonic synapses with approximate linear weight updates for neuromorphic computing are also achieved in our ferroelectric devices. This work represents a breakthrough toward technological applications of ferroelectric nanodomain engineering by light.
dc.description.sponsorshipThe research presented here was supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: CRF-2015-2634-CRG4 and CRF-2016-2996-CRG5. J. H. H. thanks the financial support from City University of Hong Kong.
dc.language.isoen
dc.publisherWiley
dc.rightsArchived with thanks to Advanced Functional Materials
dc.titleOptoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalAdvanced Functional Materials
dc.rights.embargodate2021-08-12
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Materials Science and Engineering, University of New South Wales, NSW 2052, Australia
dc.contributor.institutionDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China.
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
pubs.publication-statusAccepted
kaust.personXue, Fei
kaust.personHe, Xin
kaust.personLiu, Wenhao
kaust.personPeriyanagounder, Dharmaraj
kaust.personZhang, Chenhui
kaust.personChen, Mingguang
kaust.personLin, Chun-Ho
kaust.personLuo, Linqu
kaust.personYenge, Emre
kaust.personTung, Vincent
kaust.personAnthopoulos, Thomas D.
kaust.personLi, Lain-Jong
kaust.personHe, Jr-Hau
kaust.personZhang, Xixiang
kaust.grant.numberCRF-2015-2634-CRG4
kaust.grant.numberCRF-2016-2996-CRG5
kaust.acknowledged.supportUnitOffice of Sponsored Research (OSR)


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