Optoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric
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Xue, FeiHe, Xin

Liu, Wenhao
Periyanagounder, Dharmaraj

Zhang, Chenhui

Chen, Mingguang
Lin, Chun-Ho
Luo, Linqu
Yenge, Emre
Tung, Vincent

Anthopoulos, Thomas D.

Li, Lain-Jong

He, Jr-Hau

Zhang, Xixiang

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Solar Center (KSC)
Material Science and Engineering Program
Nano Energy Lab
Physical Science and Engineering (PSE) Division
KAUST Grant Number
CRF-2015-2634-CRG4CRF-2016-2996-CRG5
Date
2020-09-20Embargo End Date
2021-08-12Permanent link to this record
http://hdl.handle.net/10754/664575
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Due to the potential application in optoelectronic memories, optical control of ferroelectric domain walls has emerged as an intriguing and important topic in modern solid-state physics. However, its device implementation in a single ferroelectric, such as conventional BaTiO3 or PZT ceramic, still presents huge challenges in terms of the poor material conductivity and the energy mismatch between incident photons and ferroelectric switching. Here, using the generation of photocurrent in conductive 𝜶-In2Se3 (a van der Waals ferroelectric) with a two-terminal planar architecture, we report the first demonstration of optical-engineered ferroelectric domain wall in a non-volatile manner for optoelectronic memory application. The 𝜶-In2Se3 device exhibits a large optical-writing and electrical-erasing (on/off) ratio of > 104, as well as multilevel current switching upon optical excitation. The narrow direct bandgap of the multilayer 𝜶-In2Se3 ferroelectric endows the device with broadband optical-writing wavelengths greater than 900 nm. In addition, photonic synapses with approximate linear weight updates for neuromorphic computing are also achieved in our ferroelectric devices. This work represents a breakthrough toward technological applications of ferroelectric nanodomain engineering by light.Citation
Xue, F., He, X., Liu, W., Periyanagounder, D., Zhang, C., Chen, M., … Zhang, X. (2020). Optoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric. Advanced Functional Materials, 2004206. doi:10.1002/adfm.202004206Sponsors
The research presented here was supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: CRF-2015-2634-CRG4 and CRF-2016-2996-CRG5. J. H. H. thanks the financial support from City University of Hong Kong.Publisher
WileyJournal
Advanced Functional Materialsae974a485f413a2113503eed53cd6c53
10.1002/adfm.202004206