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    Optoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric

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    Clean%20Manuscript%20-%202.pdf
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    Description:
    Accepted Manuscript
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    Type
    Article
    Authors
    Xue, Fei
    He, Xin cc
    Liu, Wenhao
    Periyanagounder, Dharmaraj cc
    Zhang, Chenhui cc
    Chen, Mingguang
    Lin, Chun-Ho
    Luo, Linqu
    Yenge, Emre
    Tung, Vincent cc
    Anthopoulos, Thomas D. cc
    Li, Lain-Jong cc
    He, Jr-Hau cc
    Zhang, Xixiang cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Nano Energy Lab
    Physical Science and Engineering (PSE) Division
    KAUST Grant Number
    CRF-2015-2634-CRG4
    CRF-2016-2996-CRG5
    Date
    2020-09-20
    Embargo End Date
    2021-08-12
    Permanent link to this record
    http://hdl.handle.net/10754/664575
    
    Metadata
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    Abstract
    Due to the potential application in optoelectronic memories, optical control of ferroelectric domain walls has emerged as an intriguing and important topic in modern solid-state physics. However, its device implementation in a single ferroelectric, such as conventional BaTiO3 or PZT ceramic, still presents huge challenges in terms of the poor material conductivity and the energy mismatch between incident photons and ferroelectric switching. Here, using the generation of photocurrent in conductive 𝜶-In2Se3 (a van der Waals ferroelectric) with a two-terminal planar architecture, we report the first demonstration of optical-engineered ferroelectric domain wall in a non-volatile manner for optoelectronic memory application. The 𝜶-In2Se3 device exhibits a large optical-writing and electrical-erasing (on/off) ratio of > 104, as well as multilevel current switching upon optical excitation. The narrow direct bandgap of the multilayer 𝜶-In2Se3 ferroelectric endows the device with broadband optical-writing wavelengths greater than 900 nm. In addition, photonic synapses with approximate linear weight updates for neuromorphic computing are also achieved in our ferroelectric devices. This work represents a breakthrough toward technological applications of ferroelectric nanodomain engineering by light.
    Citation
    Xue, F., He, X., Liu, W., Periyanagounder, D., Zhang, C., Chen, M., … Zhang, X. (2020). Optoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric. Advanced Functional Materials, 2004206. doi:10.1002/adfm.202004206
    Sponsors
    The research presented here was supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: CRF-2015-2634-CRG4 and CRF-2016-2996-CRG5. J. H. H. thanks the financial support from City University of Hong Kong.
    Publisher
    Wiley
    Journal
    Advanced Functional Materials
    DOI
    10.1002/adfm.202004206
    ae974a485f413a2113503eed53cd6c53
    10.1002/adfm.202004206
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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