Optoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric
Anthopoulos, Thomas D.
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Material Science and Engineering Program
Electrical Engineering Program
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
KAUST Solar Center (KSC)
Embargo End Date2021-08-12
Permanent link to this recordhttp://hdl.handle.net/10754/664575
MetadataShow full item record
AbstractDue to the potential application in optoelectronic memories, optical control of ferroelectric domain walls has emerged as an intriguing and important topic in modern solid-state physics. However, its device implementation in a single ferroelectric, such as conventional BaTiO3 or PZT ceramic, still presents huge challenges in terms of the poor material conductivity and the energy mismatch between incident photons and ferroelectric switching. Here, using the generation of photocurrent in conductive 𝜶-In2Se3 (a van der Waals ferroelectric) with a two-terminal planar architecture, we report the first demonstration of optical-engineered ferroelectric domain wall in a non-volatile manner for optoelectronic memory application. The 𝜶-In2Se3 device exhibits a large optical-writing and electrical-erasing (on/off) ratio of > 104, as well as multilevel current switching upon optical excitation. The narrow direct bandgap of the multilayer 𝜶-In2Se3 ferroelectric endows the device with broadband optical-writing wavelengths greater than 900 nm. In addition, photonic synapses with approximate linear weight updates for neuromorphic computing are also achieved in our ferroelectric devices. This work represents a breakthrough toward technological applications of ferroelectric nanodomain engineering by light.
SponsorsThe research presented here was supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: CRF-2015-2634-CRG4 and CRF-2016-2996-CRG5. J. H. H. thanks the financial support from City University of Hong Kong.
JournalAdvanced Functional Materials