KAUST DepartmentCleanroom Operations
Permanent link to this recordhttp://hdl.handle.net/10754/664522
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AbstractThe formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
CitationTrapalis, A., Fry, P. W., Kennedy, K., Farrer, I., Kean, A., Sharman, J., & Heffernan, J. (2020). Investigation of a novel AlZnN semiconductor alloy. Materials Letters: X, 7, 100052. doi:10.1016/j.mlblux.2020.100052
SponsorsThe authors wish to acknowledge funding by the EPSRC (Engineering and Physical Science Research Council, EP/M507611/1) the two funders contributed to the same grant ID in an Industrial CASE Award and Johnson Matthey PLC (Award No. 14550005). The data presented in this paper is available to download for free with the following DOI: 10.15131/shef.data.12327560.
JournalMaterials Letters: X
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