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dc.contributor.authorAlzahrani, Areej A.
dc.contributor.authorAllen, Thomas
dc.contributor.authorde Bastiani, Michele
dc.contributor.authorVan Kerschaver, Emmanuel
dc.contributor.authorHarrison, George T.
dc.contributor.authorLiu, Wenzhu
dc.contributor.authorDe Wolf, Stefaan
dc.date.accessioned2020-08-09T08:28:04Z
dc.date.available2020-08-09T08:28:04Z
dc.date.issued2020-07-29
dc.date.submitted2020-04-02
dc.identifier.citationAlzahrani, A., Allen, T. G., De Bastiani, M., Van Kerschaver, E., Harrison, G. T., Liu, W., & De Wolf, S. (2020). In Situ Plasma-Grown Silicon-Oxide for Polysilicon Passivating Contacts. Advanced Materials Interfaces, 2000589. doi:10.1002/admi.202000589
dc.identifier.issn2196-7350
dc.identifier.issn2196-7350
dc.identifier.doi10.1002/admi.202000589
dc.identifier.urihttp://hdl.handle.net/10754/664514
dc.description.abstractLarge-scale manufacturing of polysilicon-based passivating contacts for high-efficiency crystalline silicon (c-Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum-mechanical tunneling. Here, plasma-dissociated CO2 is investigated to grow in situ thin (<2 nm) SiOx films on c-Si wafers as tunnel-oxides for plasma-deposited, hole-collecting (i.e., p-type) polysilicon contacts. It is found that such plasma processing offers excellent thickness control and superior structural integrity upon thermal annealing at 1000 °C, compared to state-of-the-art wet-chemical oxides. As a result, p-type polysilicon contacts are achieved on n-type c-Si wafers that combine excellent surface passivation, resulting in an implied open-circuit voltage exceeding 700 mV, with a contact resistance as low as 0.02 Ω cm2.
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/abs/10.1002/admi.202000589
dc.rightsArchived with thanks to Advanced Materials Interfaces
dc.titleIn Situ Plasma-Grown Silicon-Oxide for Polysilicon Passivating Contacts
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentKAUST Solar Center (KSC)King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
dc.identifier.journalAdvanced Materials Interfaces
dc.rights.embargodate2021-07-29
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of PhysicsFaculty of Science and ArtsAl-Baha University Al-Makhwah 65931 Saudi Arabia
dc.identifier.pages2000589
kaust.personAl-Zahrani, Areej
kaust.personAllen, Thomas
kaust.personde Bastiani, Michele
kaust.personVan Kerschaver, Emmanuel
kaust.personHarrison, George T.
kaust.personLiu, Wenzhu
kaust.personDe Wolf, Stefaan
kaust.grant.numberOSR-CRG URF/1/3383
dc.date.accepted2020-06-21
dc.identifier.eid2-s2.0-85088571675
kaust.acknowledged.supportUnitOffice of Sponsored Research (OSR)


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