In Situ Plasma-Grown Silicon-Oxide for Polysilicon Passivating Contacts
AuthorsAlzahrani, Areej A.
de Bastiani, Michele
Van Kerschaver, Emmanuel
Harrison, George T.
De Wolf, Stefaan
KAUST DepartmentKAUST Solar Center (KSC)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant NumberOSR-CRG URF/1/3383
Online Publication Date2020-07-28
Print Publication Date2020-11
Embargo End Date2021-07-29
Permanent link to this recordhttp://hdl.handle.net/10754/664514
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AbstractLarge-scale manufacturing of polysilicon-based passivating contacts for high-efficiency crystalline silicon (c-Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum-mechanical tunneling. Here, plasma-dissociated CO2 is investigated to grow in situ thin (<2 nm) SiOx films on c-Si wafers as tunnel-oxides for plasma-deposited, hole-collecting (i.e., p-type) polysilicon contacts. It is found that such plasma processing offers excellent thickness control and superior structural integrity upon thermal annealing at 1000 °C, compared to state-of-the-art wet-chemical oxides. As a result, p-type polysilicon contacts are achieved on n-type c-Si wafers that combine excellent surface passivation, resulting in an implied open-circuit voltage exceeding 700 mV, with a contact resistance as low as 0.02 Ω cm2.
CitationAlzahrani, A., Allen, T. G., De Bastiani, M., Van Kerschaver, E., Harrison, G. T., Liu, W., & De Wolf, S. (2020). In Situ Plasma-Grown Silicon-Oxide for Polysilicon Passivating Contacts. Advanced Materials Interfaces, 2000589. doi:10.1002/admi.202000589
SponsorsThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383.
JournalAdvanced Materials Interfaces