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dc.contributor.authorVelazquez-Rizo, Martin
dc.contributor.authorIida, Daisuke
dc.contributor.authorOhkawa, Kazuhiro
dc.date.accessioned2020-08-09T06:21:02Z
dc.date.available2020-08-09T06:21:02Z
dc.date.issued2020-07-28
dc.date.submitted2020-03-03
dc.identifier.citationVelazquez-Rizo, M., Iida, D., & Ohkawa, K. (2020). Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-Fe2O3 as cocatalyst. Scientific Reports, 10(1). doi:10.1038/s41598-020-69419-8
dc.identifier.issn2045-2322
dc.identifier.pmid32724225
dc.identifier.doi10.1038/s41598-020-69419-8
dc.identifier.urihttp://hdl.handle.net/10754/664511
dc.description.abstractNitrides are of particular interest in energy applications given their suitability to photocatalytically generate H2 from aqueous solutions. However, one of the drawbacks of nitrides is the decomposition they suffer when used in photoelectrochemical cells. Here, we report the improvement of the catalytic performance and chemical stability of a GaN electrode when it is decorated with Fe2O3 particles compared with an undecorated electrode. Our results show a higher reaction rate in the Fe2O3/GaN electrode, and that photocorrosion marks take more than 20 times longer to appear on it. We also characterized the crystalline properties of the Fe2O3 particles with transmission electron microscopy. The results show that the Fe2O3 particles keep an epitaxial relationship with GaN that follows the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints. We also characterized an Fe2O3 (thin film)/GaN electrode, however it did not present any catalytic improvement compared with a bare GaN electrode. The epitaxial relationship found between the Fe2O3 thin film and GaN exhibited the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.
dc.description.sponsorshipThis work was financially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1676-01-01 and start-up funding BAS/1/1676-01-08.
dc.publisherSpringer Science and Business Media LLC
dc.relation.urlhttp://www.nature.com/articles/s41598-020-69419-8
dc.relation.urlhttps://www.nature.com/articles/s41598-020-69419-8.pdf
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.titlePhotoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-Fe2O3 as cocatalyst.
dc.typeArticle
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalScientific reports
dc.identifier.pmcidPMC7387544
dc.eprint.versionPublisher's Version/PDF
dc.identifier.volume10
dc.identifier.issue1
kaust.personVelazquez-Rizo, Martin
kaust.personIida, Daisuke
kaust.personOhkawa, Kazuhiro
kaust.grant.numberBAS/1/1676-01-01
kaust.grant.numberBAS/1/1676-01-08
dc.date.accepted2020-07-10
dc.identifier.eid2-s2.0-85088626327
refterms.dateFOA2020-08-09T06:22:06Z
dc.date.published-online2020-07-28
dc.date.published-print2020-12


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This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
Except where otherwise noted, this item's license is described as This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.