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    Atomic Layer Deposition of Vanadium Oxide as Hole-Selective Contact for Crystalline Silicon Solar Cells

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    Type
    Article
    Authors
    Yang, Xinbo cc
    Xu, Hang
    Liu, Wenzhu
    Bi, Qunyu
    Xu, Lujia
    Kang, Jingxuan
    Hedhili, Mohamed N. cc
    Sun, Baoquan
    Zhang, Xiaohong
    De Wolf, Stefaan cc
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Material Science and Engineering Program
    Computer Science
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    KAUST Solar Center (KSC)
    Relocation
    Material Science and Engineering
    Surface Science
    Date
    2020-07-15
    Online Publication Date
    2020-07-15
    Print Publication Date
    2020-08
    Embargo End Date
    2021-07-16
    Submitted Date
    2020-05-04
    Permanent link to this record
    http://hdl.handle.net/10754/664337
    
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    Abstract
    High carrier recombination loss at the contact regions has become the dominant factor limiting the power conversion efficiency (PCE) of crystalline silicon (c-Si) solar cells. Dopant-free carrier-selective contacts are being intensively developed to overcome this challenge. In this work, vanadium oxide (VOx ) deposited by atomic layer deposition (ALD) is investigated and optimized as a potential hole-selective contact for c-Si solar cells. ALD VOx films are demonstrated to simultaneously offer a good surface passivation and an acceptable contact resistivity (ρc) on c-Si, achieving a best contact recombination current density (J 0) of ≈40 fA cm−2 and a minimum ρc of ≈95 mΩ.cm2. Combined with a high work function of 6.0 eV, ALD VOx films are proven to be an effective hole-selective contact on c-Si. By the implementation of hole-selective VOx contact, the state-of-the-art PCE of 21.6% on n-type c-Si solar cells with a high stability is demonstarted. These results demonstrate the high potential of ALD VOx as a stable hole-transport layer for photovoltaic devices, with applications beyond c-Si, such as perovskite and organic solar cells.
    Citation
    Yang, X., Xu, H., Liu, W., Bi, Q., Xu, L., Kang, J., … De Wolf, S. (2020). Atomic Layer Deposition of Vanadium Oxide as Hole-Selective Contact for Crystalline Silicon Solar Cells. Advanced Electronic Materials, 2000467. doi:10.1002/aelm.202000467
    Sponsors
    The work presented in this publication was financially supported by King Abdullah University of Science and Technology (KAUST), through the Competitive Research Grant. B.S. and X.Z. acknowledge the National Natural Science Foundation of China (No. 91833303). The authors would like to thank Dr. Michele De Bastiani and Dr. Thomas Allen in KAUST for helping the device fabrication and Dr. Ziv Hameiri (University of New South Wales) for conducting the contactless capacitance–voltage (C–V ) measurements. The authors also thank Heno Hwang, scientific illustrator at KAUST, for producing Figure 5a.
    Publisher
    Wiley
    Journal
    Advanced Electronic Materials
    DOI
    10.1002/aelm.202000467
    Additional Links
    https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.202000467
    ae974a485f413a2113503eed53cd6c53
    10.1002/aelm.202000467
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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