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dc.contributor.authorMohan, Lokeshwari
dc.contributor.authorRatnasingham, Sinclair R.
dc.contributor.authorPanidi, Julianna
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorBinions, Russell
dc.contributor.authorMcLachlan, Martyn A.
dc.contributor.authorBriscoe, Joe
dc.date.accessioned2020-07-19T11:53:10Z
dc.date.available2020-07-19T11:53:10Z
dc.date.issued2020-07-09
dc.identifier.citationMohan, L., Ratnasingham, S. R., Panidi, J., Anthopoulos, T. D., Binions, R., McLachlan, M. A., & Briscoe, J. (2020). Low Temperature Scalable Deposition of Copper (I) Thiocyanate Films via Aerosol-Assisted Chemical Vapour Deposition. Crystal Growth & Design. doi:10.1021/acs.cgd.0c00605
dc.identifier.issn1528-7483
dc.identifier.issn1528-7505
dc.identifier.doi10.1021/acs.cgd.0c00605
dc.identifier.urihttp://hdl.handle.net/10754/664254
dc.description.abstractCopper (I) thiocyanate (CuSCN) is a stable, wide bandgap (>3.5 eV), low-cost p-type semiconductor widely used in a variety of optoelectronic applications, including thin film transistors, organic light-emitting diodes and photovoltaic cells. For CuSCN to have impact in the commercial fabrication of such devices, large area, low-cost deposition techniques are required. Here, we report a novel technique for deposition of CuSCN that addresses these challenges. Aerosol-assisted chemical vapour deposition (AACVD) is used to deposit highly crystalline CuSCN films at low temperature. AACVD is a commercially viable technique due to its low cost and inherent scalability. In this study the deposition temperature, CuSCN concentration and carrier gas flow rate were studied and optimised, resulting in homogeneous films grown over areas approaching 30 cm2. At the optimised values i.e. 60 C using a 35 mg/ml solution and a carrier gas flow rate of 0.5 dm3/min, the film growth rate is around 100 nm/min. We present a thorough analysis of the film growth parameters and the subsequent morphology, composition, structural and optical properties of the deposited thin films.
dc.description.sponsorshipThe authors acknowledge EPSRC Centre for Doctoral Training in Plastic Electronic Materials EP/L016702/1 for their support.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acs.cgd.0c00605
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Crystal Growth & Design, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.cgd.0c00605.
dc.titleLow Temperature Scalable Deposition of Copper (I) Thiocyanate Films via Aerosol-Assisted Chemical Vapour Deposition
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalCrystal Growth & Design
dc.rights.embargodate2021-07-09
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Materials and Centre for Plastic Electronics, Imperial College London, South Kensington, London SW7 2AZ, United Kingdom.
dc.contributor.institutionSchool of Engineering and Materials Science and Materials Research Institute, Queen Mary University of London, Mile End Road, London E1 4NS, United Kingdom.
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington, London SW7 2AZ, United Kingdom.
kaust.personAnthopoulos, Thomas D.
refterms.dateFOA2020-07-19T11:54:20Z
dc.date.published-online2020-07-09
dc.date.published-print2020-08-05


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