Speed enhancement of magnetic logic-memory device by insulator-to-metal transition
Type
ArticleAuthors
Pu, YuchenMou, Hongming
Lu, Ziyao
Nawaz, Seeraz
Wang, Guilin
Zhang, Zhigang
Yang, Yuanjun

Zhang, Xixiang

Zhang, Xiaozhong

KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2020-07-14Online Publication Date
2020-07-14Print Publication Date
2020-07-13Submitted Date
2020-05-11Permanent link to this record
http://hdl.handle.net/10754/664204
Metadata
Show full item recordAbstract
Complementary metal-oxide-semiconductor logic circuits used in conventional computers require frequent communication with external nonvolatile memory, causing the memory wall problem. Recently reported magnetic logic with reconfigurable logic operation and built-in nonvolatile memory can potentially bridge this gap. However, its high-frequency performance is not well studied. Here, we first perform experimental and theoretical investigation on the switching time of magnetic logic-memory devices combining magnetic units and negative differential resistance (NDR) of semiconductors. It is found that the switching time of S-type NDR (transistor circuits) in logic operations is 300 ns and determined by the transistor’s internal turn-on properties. We then propose a magnetic logic-memory device by coupling the anomalous Hall effect in magnetic materials and the insulator-to-metal transition in VO2. Our device realizes reliable output (output ratio > 1000%), a low work magnetic field (<20 mT), and excellent high-frequency performance (switching time ¼ 1–10 ns).Citation
Pu, Y., Mou, H., Lu, Z., Nawaz, S., Wang, G., Zhang, Z., … Zhang, X. (2020). Speed enhancement of magnetic logic-memory device by insulator-to-metal transition. Applied Physics Letters, 117(2), 022407. doi:10.1063/5.0013301Publisher
AIP PublishingJournal
Applied Physics LettersAdditional Links
http://aip.scitation.org/doi/10.1063/5.0013301ae974a485f413a2113503eed53cd6c53
10.1063/5.0013301