• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguidePlumX LibguideSubmit an Item

    Statistics

    Display statistics

    Speed enhancement of magnetic logic-memory device by insulator-to-metal transition

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    S_Speed enhancement.pdf
    Size:
    934.2Kb
    Format:
    PDF
    Description:
    Published version
    Download
    Type
    Article
    Authors
    Pu, Yuchen
    Mou, Hongming
    Lu, Ziyao
    Nawaz, Seeraz
    Wang, Guilin
    Zhang, Zhigang
    Yang, Yuanjun cc
    Zhang, Xixiang cc
    Zhang, Xiaozhong cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2020-07-14
    Online Publication Date
    2020-07-14
    Print Publication Date
    2020-07-13
    Submitted Date
    2020-05-11
    Permanent link to this record
    http://hdl.handle.net/10754/664204
    
    Metadata
    Show full item record
    Abstract
    Complementary metal-oxide-semiconductor logic circuits used in conventional computers require frequent communication with external nonvolatile memory, causing the memory wall problem. Recently reported magnetic logic with reconfigurable logic operation and built-in nonvolatile memory can potentially bridge this gap. However, its high-frequency performance is not well studied. Here, we first perform experimental and theoretical investigation on the switching time of magnetic logic-memory devices combining magnetic units and negative differential resistance (NDR) of semiconductors. It is found that the switching time of S-type NDR (transistor circuits) in logic operations is 300 ns and determined by the transistor’s internal turn-on properties. We then propose a magnetic logic-memory device by coupling the anomalous Hall effect in magnetic materials and the insulator-to-metal transition in VO2. Our device realizes reliable output (output ratio > 1000%), a low work magnetic field (<20 mT), and excellent high-frequency performance (switching time ¼ 1–10 ns).
    Citation
    Pu, Y., Mou, H., Lu, Z., Nawaz, S., Wang, G., Zhang, Z., … Zhang, X. (2020). Speed enhancement of magnetic logic-memory device by insulator-to-metal transition. Applied Physics Letters, 117(2), 022407. doi:10.1063/5.0013301
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/5.0013301
    Additional Links
    http://aip.scitation.org/doi/10.1063/5.0013301
    ae974a485f413a2113503eed53cd6c53
    10.1063/5.0013301
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

    entitlement

     
    DSpace software copyright © 2002-2021  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.