Enhanced UV emission of GaN nanowires functionalized by wider bandgap solution-processed p-MnO quantum dots
Flemban, Tahani Hassan
Roqan, Iman S.
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant NumberBAS/1/1319-01-01
Embargo End Date2021-07-04
Permanent link to this recordhttp://hdl.handle.net/10754/664124
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AbstractGaN-based UV light emitting devices suffer from low efficiency. To mitigate this issue, we hybridized GaN nanowires (NWs) grown on Si substrates by plasma-assisted molecular beam epitaxy with solution-processed p-type MnO quantum dots (QDs) characterized by a wider bandgap (~ 5 eV) than that of GaN. Further investigations reveal that the photoluminescence intensity of the GaN NWs increases up to ~ 3.9-fold (~ 290%) after functionalizing them with p-MnO QDs, while the internal quantum efficiency is improved by ~1.7-fold. Electron energy loss spectroscopy (EELS) incorporated into transmission electron microscopy (TEM) reveals an increase in the density of states in QD-decorated NWs compared to the bare ones. The advanced optical and EELS analyses indicate that the energy transfer from the wider-bandgap p-MnO QDs to n-GaN NW leads to substantial emission enhancement and a greater radiative recombination contribution, due to the good band alignment between MnO QDs and GaN NW. This work provides valuable insight into an environmentally-friendly strategy for improving UV device performance.
CitationAlmalawi, D., Lopatin, S., Mitra, S., Flemban, T. H., Siladie, A.-M., Gayral, B., … Roqan, I. S. (2020). Enhanced UV emission of GaN nanowires functionalized by wider bandgap solution-processed p-MnO quantum dots. ACS Applied Materials & Interfaces. doi:10.1021/acsami.0c07029
SponsorsAuthors thanks KAUST for the finance support using the base fund number BAS/1/1319-01-01.
PublisherAmerican Chemical Society (ACS)