Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors
Type
ArticleAuthors
Cheng, FeiVerrelli, Emanuele
Alharthi, Fahad A.
Das, Satyajit
Anthopoulos, Thomas D.
Lai, Khue T.
Kemp, Neil T.
O'Neill, Mary
Kelly, Stephen M.
Date
2020Submitted Date
2020-05-09Permanent link to this record
http://hdl.handle.net/10754/664071Metadata
Show full item recordAbstract
<p>A prototype solution-processed n-type thin film transistor was fabricated. The film incorporates a dielectric layer prepared from solution-processed and photopolymerised inorganic/organic TiO$_{2}$ nanorods and zinc oxide as the semiconductor, also deposited from solution.</p>Citation
Cheng, F., Verrelli, E., Alharthi, F. A., Das, S., Anthopoulos, T. D., Lai, K. T., … Kelly, S. M. (2020). Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors. RSC Advances, 10(43), 25540–25546. doi:10.1039/d0ra04445hSponsors
The research leading to these results received funding from the EPSRC under the grant agreement EP/J001597/1 and Researchers Supporting Project number (RSP-2020/160), King Saud University, Riyadh, Saudi Arabia. T. D. A. acknowledges the King Abdullah University of Science and Technology for Financial supportPublisher
Royal Society of Chemistry (RSC)Journal
RSC AdvancesAdditional Links
http://xlink.rsc.org/?DOI=D0RA04445HScopus Count
Collections
Articles
Except where otherwise noted, this item's license is described as This is an open access article.