Multi-Level Nanoimprint Lithography for Large-Area Thin Film Transistor Backplane Manufacturing
Type
ArticleAuthors
Dogan, Tamerde Riet, Joris
Bel, Thijs
Verbeek, Roy
Katsouras, Ilias
Meulenkamp, Eric
Gelinck, Gerwin
Jisk Kronemeijer, Auke
Date
2020-06-30Online Publication Date
2020-06-30Print Publication Date
2020-07-01Permanent link to this record
http://hdl.handle.net/10754/664010
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Show full item recordAbstract
Thin film transistors (TFTs) are the basis for current AMOLED display arrays. For next- generation displays, higher resolution and cost-effective manufacturing of panels is adamant. The current benchmark patterning method in the display industry is photolithography. Here, we propose the use of a hybrid approach of nanoimprint lithography and conventional FPD processing for the realization of high-resolution display backplanes. We demonstrate the realization of sub-micron amorphous oxide semiconductor TFTs with multi-level nanoimprint lithography in order to decrease the number of patterning steps in display manufacturing. Top-gate self-aligned a-IGZO TFTs are realized with performance comparable to benchmark photolithography-based TFTs.Citation
Dogan, T., de Riet, J., Bel, T., Verbeek, R., Katsouras, I., Meulenkamp, E., … Jisk Kronemeijer, A. (2020). Multi-Level Nanoimprint Lithography for Large-Area Thin Film Transistor Backplane Manufacturing. Journal of Photopolymer Science and Technology, 33(2), 241–244. doi:10.2494/photopolymer.33.241Sponsors
This work is financed through the Flexlines project within the Interreg V-programme FlandersThe Netherlands, a cross-border cooperation programme with financial support from the European Regional Development Fund, and co financed by the Province of Noord-Brabant, The Netherlands, and King Abdullah University of Science and Technology (KAUST) OSR-CRF CRG funding.ae974a485f413a2113503eed53cd6c53
10.2494/photopolymer.33.241