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dc.contributor.authorKhan, Mohammed Zahed Mustafa
dc.contributor.authorMukhtar, Sani
dc.contributor.authorHolguin Lerma, Jorge Alberto
dc.contributor.authorAlkhazragi, Omar
dc.contributor.authorAshry, Islam
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2020-07-05T13:03:54Z
dc.date.available2020-07-05T13:03:54Z
dc.date.issued2020-07-02
dc.identifier.citationKhan, M. Z. M., Mukhtar, S., Holguín-Lerma, J. A., Alkhazragi, O., Ashry, I., Ng, T. K., & Ooi, B. S. (2020). Prism-based tunable InGaN/GaN self-injection locked blue laser diode system: study of temperature, injection ratio, and stability. Journal of Nanophotonics, 14(03), 1. doi:10.1117/1.jnp.14.036001
dc.identifier.issn1934-2608
dc.identifier.doi10.1117/1.jnp.14.036001
dc.identifier.urihttp://hdl.handle.net/10754/664003
dc.description.abstractA quasicontinuously wavelength tuned self-injection locked blue laser diode system employing a prism is presented. A rigorous analysis of the injection ratio (IR) in the form of three systems, namely high (HRS, ∼ − 0.7 dB IR), medium (MRS, ∼ − 1.5 dB IR), and low (LRS, ∼ − 3.0 dB IR) reflection systems, showed a direct relationship with the wavelength tunability whereas the usable system power exhibited an inverse correlation. In particular, MRS configuration demonstrated a concurrent optimization of tuning window and system power, thus emerging as a highly attractive candidate for practical realization. Moreover, a comprehensive investigation on two distinct MRS configurations employing different commercially available InGaN/GaN blue lasers, i.e., MRS-1 and MRS-2, displayed a wavelength tunability (system power) of ∼8.2 nm (∼7.6 mW) and ∼6.3 nm (∼11.6 mW), respectively, at a low injection current of 130 mA. In addition, both MRS configurations maintained high-performance characteristic with corresponding average optical linewidths of ∼80 and ∼58 pm and a side-mode-suppression-ratio of ≥12 dB. Lastly, a thorough stability analysis of HRS and MRS configurations, which are more prone to system instabilities due to elevated IRs, is performed at critical operation conditions of a high injection current of ≥260 mA and a temperature of 40°C, showing an extended stable performance of over 120 min, thus further substantiating the promising features of the prism-based systems for practical applications.
dc.description.sponsorshipThe authors (SM and MZMK) would like to thank King Fahd University of Petroleum and Minerals for supporting this research and acknowledge support from King Abdulaziz City for Science and Technology (KACST), Technology Innovation Center (TIC) for Solid-State Lighting sub-awarded grant EE002381 and the main grant KACST TIC R2-FP-08. The authors (JAH, OA, IA, TKN, and BSO) acknowledge support from King Abdullah University of Science and Technology (KAUST) through baseline funding BAS/1/1614-01-01 and KAUST-KFUPM Special Initiative program (REP/1/2878-01-01).
dc.publisherSPIE-Intl Soc Optical Eng
dc.relation.urlhttps://www.spiedigitallibrary.org/journals/journal-of-nanophotonics/volume-14/issue-03/036001/Prism-based-tunable-InGaN-GaN-self-injection-locked-blue-laser/10.1117/1.JNP.14.036001.full
dc.rightsCopyright 2020 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
dc.titlePrism-based tunable InGaN/GaN self-injection locked blue laser diode system: study of temperature, injection ratio, and stability
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalJournal of Nanophotonics
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionKing Fahd University of Petroleum and Minerals
dc.identifier.volume14
dc.identifier.issue03
dc.identifier.pages1
kaust.personHolguin Lerma, Jorge Alberto
kaust.personAlkhazragi, Omar
kaust.personAshry, Islam
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
kaust.grant.numberREP/1/2878-01-01
refterms.dateFOA2020-07-05T13:07:40Z
kaust.acknowledged.supportUnitKAUST-KFUPM Special Initiative
kaust.acknowledged.supportUnitTechnology Innovation Center (TIC)


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