Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L10 FePt Single Layer.
Pennycook, Stephen J
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Embargo End Date2021-06-30
Permanent link to this recordhttp://hdl.handle.net/10754/663956
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AbstractDue to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L10 phase enables magnetic storage and memory devices with ultrahigh capacity. However, reversing the FePt magnetic state, and therefore encoding information, has proven to be extremely difficult. Here, it is demonstrated that an electric current can exert a large spin torque on an L10 FePt magnet, ultimately leading to reversible magnetization switching. The spin torque monotonically increases with increasing FePt thickness, exhibiting a bulk characteristic. Meanwhile, the spin torque effective fields and switching efficiency increase as the FePt approaches higher chemical ordering with stronger spin-orbit coupling. The symmetry breaking that generates spin torque within L10 FePt is shown to arise from an inherent structural gradient along the film normal direction. By artificially reversing the structural gradient, an opposite spin torque effect in L10 FePt is demonstrated. At last, the role of the disorder gradient in generating a substantial torque in a single ferromagnet is supported by theoretical calculations. These results will push forward the frontier of material systems for generating spin torques and will have a transformative impact on magnetic storage and spin memory devices with simple architecture, ultrahigh density, and readily application.
CitationTang, M., Shen, K., Xu, S., Yang, H., Hu, S., Lü, W., … Qiu, X. (2020). Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L 1 0 FePt Single Layer. Advanced Materials, 2002607. doi:10.1002/adma.202002607
SponsorsThis work was supported by the National Key R&D Program of China (grant nos. 2017YFA0303202 and 2017YFA0305300), the National Natural Science Foundation of China (grant nos. 11974260, 11674246, 51501131, 51671147, 11874283, 51801152, and 11774064), the Natural Science Foundation of Shanghai (grant nos. 17ZR1443700 and 19ZR1478700), and Fundamental Research Funds for the Central Universities. The work carried out in National University of Singapore was funded by Singapore Ministry of Education AcRF Tier 2 fund MOE2019-T2-1-150. A.M. was supported by the King Abdullah University of Science and Technology (KAUST).
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