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dc.contributor.authorChen, Liang
dc.contributor.authorSirenko, Kostyantyn
dc.contributor.authorLi, Ping
dc.contributor.authorBagci, Hakan
dc.date.accessioned2021-05-23T09:17:48Z
dc.date.available2020-06-18T12:40:15Z
dc.date.available2021-05-23T09:17:48Z
dc.date.issued2021-04-12
dc.identifier.citationChen, L., Sirenko, K., Li, P., & Bagci, H. (2021). Efficient discontinuous Galerkin scheme for analyzing nanostructured photoconductive devices. Optics Express, 29(9), 12903. doi:10.1364/oe.422619
dc.identifier.issn1094-4087
dc.identifier.doi10.1364/OE.422619
dc.identifier.urihttp://hdl.handle.net/10754/663701
dc.description.abstractIncorporation of plasmonic nanostructures in the design of photoconductive devices (PCDs) has significantly improved their optical-to-terahertz conversion efficiency. However, this improvement comes at the cost of increased complexity for the design and simulation of these devices. Indeed, accurate and efficient modeling of multiphysics processes and intricate device geometries of nanostructured PCDs is challenging due to the high computational cost resulting from multiple characteristic scales in time and space. In this work, a discontinuous Galerkin (DG)-based unit-cell scheme for efficient simulation of PCDs with periodic nanostructures is proposed. The scheme considers two physical stages of the device and models them using two coupled systems: A system of Poisson and drift-diffusion equations describing the nonequilibrium steady state, and a system of Maxwell and drift-diffusion equations describing the transient stage. A "potential-drop" boundary condition is enforced on the opposing boundaries of the unit cell to mimic the effect of the bias voltage. Periodic boundary conditions are used for carrier densities and electromagnetic fields. The unit-cell model described by these coupled equations and boundary conditions is discretized using DG methods. Numerical results demonstrate that the proposed DG-based unit-cell scheme has the same accuracy in predicting the THz photocurrent as the DG framework that takes into account the whole device, while it significantly reduces the computational cost.
dc.description.sponsorshipFunding. King Abdullah University of Science and Technology (2016-CRG5-2953); Okawa Foundation Research Grant. Acknowledgments. The authors would like to thank the KAUST Supercomputing Laboratory (KSL) for providing the required computational resources.
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?URI=oe-29-9-12903
dc.rightsArchived with thanks to Optics Express. © 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
dc.rights.urihttps://doi.org/10.1364/OA_License_v1#VOR-OA
dc.titleEfficient discontinuous Galerkin scheme for analyzing nanostructured photoconductive devices
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalOptics Express
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionO. Ya. Usikov Institute for Radiophysics and Electronics, National Academy of Sciences of Ukraine (IRE NASU), Kharkiv 61085, Ukraine
dc.contributor.institutionDepartment of Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
dc.identifier.volume29
dc.identifier.issue9
dc.identifier.pages12903-12917
dc.identifier.arxivid2006.02141
kaust.personChen, Liang
kaust.personBagci, Hakan
kaust.grant.number2016-CRG5-2953
dc.identifier.eid2-s2.0-85105116385
refterms.dateFOA2020-06-18T12:40:55Z
kaust.acknowledged.supportUnitKAUST Supercomputing Laboratory (KSL)


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