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dc.contributor.authorLiao, Che-Hao
dc.contributor.authorAlQatari, Feras
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2020-06-17T07:16:32Z
dc.date.available2020-06-17T07:16:32Z
dc.date.issued2020-05-17
dc.identifier.urihttp://hdl.handle.net/10754/663630
dc.description.abstractIn this work, the energy band structures of BGaN and BAlN alloys are systematically studied through first-principles calculation using HSE hybrid density functional theory by MedeA-VASP. Direct-indirect bandgap transition of BGaN alloys at B content around 44% and that of BAlN alloys at B content about 24% have been identified. The variation of electron and hole effective masses of both materials at different B compositions have also been demonstrated. A large change in hole effective masses of BGaN and BAlN alloys from B=0% to 25% has been observed. Finally, a picture of energy bandgap versus lattice constant of III-nitride family with boron is shown.
dc.publisherarXiv
dc.relation.urlhttps://arxiv.org/pdf/2005.08274
dc.rightsArchived with thanks to arXiv
dc.titleBand structures and direct-to-indirect bandgap transitions in BAlN and BGaN alloys: a first principle study
dc.typePreprint
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.eprint.versionPre-print
dc.identifier.arxivid2005.08274
kaust.personLiao, Che-Hao
kaust.personAlqatari, Feras
kaust.personLi, Xiaohang
refterms.dateFOA2020-06-17T07:16:56Z


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