Band structures and direct-to-indirect bandgap transitions in BAlN and BGaN alloys: a first principle study
dc.contributor.author | Liao, Che-Hao | |
dc.contributor.author | AlQatari, Feras | |
dc.contributor.author | Li, Xiaohang | |
dc.date.accessioned | 2020-06-17T07:16:32Z | |
dc.date.available | 2020-06-17T07:16:32Z | |
dc.date.issued | 2020-05-17 | |
dc.identifier.uri | http://hdl.handle.net/10754/663630 | |
dc.description.abstract | In this work, the energy band structures of BGaN and BAlN alloys are systematically studied through first-principles calculation using HSE hybrid density functional theory by MedeA-VASP. Direct-indirect bandgap transition of BGaN alloys at B content around 44% and that of BAlN alloys at B content about 24% have been identified. The variation of electron and hole effective masses of both materials at different B compositions have also been demonstrated. A large change in hole effective masses of BGaN and BAlN alloys from B=0% to 25% has been observed. Finally, a picture of energy bandgap versus lattice constant of III-nitride family with boron is shown. | |
dc.publisher | arXiv | |
dc.relation.url | https://arxiv.org/pdf/2005.08274 | |
dc.rights | Archived with thanks to arXiv | |
dc.title | Band structures and direct-to-indirect bandgap transitions in BAlN and BGaN alloys: a first principle study | |
dc.type | Preprint | |
dc.contributor.department | Advanced Semiconductor Laboratory | |
dc.contributor.department | Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division | |
dc.contributor.department | Electrical Engineering Program | |
dc.contributor.department | Material Science and Engineering Program | |
dc.contributor.department | Physical Science and Engineering (PSE) Division | |
dc.eprint.version | Pre-print | |
dc.identifier.arxivid | 2005.08274 | |
kaust.person | Liao, Che-Hao | |
kaust.person | Alqatari, Feras | |
kaust.person | Li, Xiaohang | |
refterms.dateFOA | 2020-06-17T07:16:56Z |
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For more information visit: https://cemse.kaust.edu.sa/