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dc.contributor.authorLiang, Jian Wei
dc.contributor.authorLi, Kuang-Hui
dc.contributor.authorKang, Chun Hong
dc.contributor.authorBraic, Laurentiu
dc.contributor.authorKiss, Adrian Emil
dc.contributor.authorZoita, Nicolae Catalin
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2020-06-14T06:24:19Z
dc.date.available2020-06-14T06:24:19Z
dc.date.issued2020-06-12
dc.date.submitted2020-04-30
dc.identifier.citationLiang, J.-W., Li, K.-H., Kang, C. H., Braic, L., Kiss, A. E., Zoita, N. C., … Ooi, B. S. (2020). Characterization of epitaxial titanium nitride mediated single-crystal nickel oxide grown on MgO-(100) and Si-(100). AIP Advances, 10(6), 065318. doi:10.1063/5.0012362
dc.identifier.issn2158-3226
dc.identifier.doi10.1063/5.0012362
dc.identifier.urihttp://hdl.handle.net/10754/663523
dc.description.abstractSingle-crystal nickel oxide (NiO) was grown, using epitaxial titanium nitride (TiN) as a preorienting interlayer, on both the lattice-matching substrate of magnesium oxide in the (100) surface orientation, MgO-(100), and a lattice-mismatched silicon (100) substrate, Si-(100), by high-temperature pulsed-laser deposition. To the best of the authors’ knowledge, this is the first report of its kind in the literature. The high-temperature sputter-deposited TiN interlayer is crucial for forming a bottom contact for the implementation of a device, and as a lattice-matching layer for NiO and MgO. The structural, surface-related, and elemental properties of the as-grown NiO/TiN/MgO(100) and NiO/TiN/Si(100) samples were determined by high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD), thinfilm x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy in conjunction with energy-dispersed x-ray spectroscopy. XRD rocking curve data confirmed that the NiO layers were single crystalline on both template substrates, and the structural quality of NiO/TiN on the lattice-matching MgO substrate surpassed that on the Si substrate. XRD φ-scan data confirmed the cube-on-cube stacking of NiO and TiN. An analysis of HRTEM fast Fourier transform (FFT) images further confirmed the single crystallinity of the NiO and TiN layers, while lattice mismatches at the NiO/TiN, TiN/MgO, and TiN/Si interfaces were examined using the FFT line profile measurements of HRTEM. The resulting thin film of single-crystalline NiO can be used as a transparent conducting electrode in group-III oxide and group-III nitride semiconductor devices, and in such electrochemical processes as solar hydrogen generation and nitrogen reduction reactions.
dc.description.sponsorshipThis research was supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, Grant No. BAS/1/1614-01-01, and by the Romanian Ministry of Education and Scientific Research through the National Core Program, Grant No. 18N/08.02.2019. The authors further acknowledge the access of the Nanofabrication Core Lab as well as the Imaging and Characterization Core Lab facilities at KAUST.
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/5.0012362
dc.relation.urlhttps://aip.scitation.org/doi/pdf/10.1063/5.0012362
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleCharacterization of epitaxial titanium nitride mediated single-crystal nickel oxide grown on MgO-(100) and Si-(100)
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentThin Films & Characterization
dc.identifier.journalAIP Advances
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionNational Institute of Research and Development for Optoelectronics INOE 2000, 409 Atomistilor St., Magurele 077125, Romania
dc.identifier.volume10
dc.identifier.issue6
dc.identifier.pages065318
kaust.personLiang, Jian-Wei
kaust.personLi, Kuang-Hui
kaust.personKang, Chun Hong
kaust.personBraic, Laurentiu
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
dc.date.accepted2020-05-28
refterms.dateFOA2020-06-14T06:26:34Z
kaust.acknowledged.supportUnitCharacterization Core Lab
kaust.acknowledged.supportUnitNanofabrication Core Lab
dc.date.published-online2020-06-12
dc.date.published-print2020-06-01


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