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dc.contributor.authorLiao, Che-Hao
dc.contributor.authorLi, Kuang-Hui
dc.contributor.authorCastanedo, C. G. Torres.
dc.contributor.authorZhang, Guozheng
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2020-06-10T11:14:21Z
dc.date.available2020-06-10T11:14:21Z
dc.date.issued2020-05-12
dc.identifier.urihttp://hdl.handle.net/10754/663491
dc.description.abstractA novel method to fabricate full range Al content of monoclinic \b{eta}-(AlxGa1-x)2O3 thin-film has been demonstrated. With an optimized annealing condition, a Pulse Laser Deposition (PLD) deposited \b{eta}-Ga2O3 thin-film could transform from a binary become a ternary \b{eta}-(AlGa)2O3 alloy, which is resulted from the Al atoms of sapphire substrate diffused into the PLD deposited gallium oxide layer. By using the ultra-high temperature annealing technique, \b{eta}-(AlxGa1-x)2O3 films with >70% Al composition could be achieved which covering the bandgap from 4.9 to 6.4 eV. With such a method, one can achieve a full range of monoclinic \b{eta}-(AlGa)2O3 thin film deposited by single Ga2O3 PLD target with good crystal quality, stable surface morphology, and a homogeneous composition of ternary compound materials without using various Al content targets of (AlGa)2O3 bulks. Ultra-high temperature annealing technique is a promising method to fabricate bandgap tunable \b{eta}-(AlGa)2O3 thin-film.
dc.publisherarXiv
dc.relation.urlhttps://arxiv.org/pdf/2005.05799
dc.rightsArchived with thanks to arXiv
dc.titleClose-to-full-composition-range ternary \b{eta}-(AlxGa1-x)2O3 thin film formed based on \b{eta}-Ga2O3/sapphire template
dc.typePreprint
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.eprint.versionPre-print
dc.identifier.arxivid2005.05799
kaust.personLiao, Che-Hao
kaust.personLi, Kuang-Hui
kaust.personCastanedo, C. G. Torres.
kaust.personZhang, Guozheng
kaust.personLi, Xiaohang
refterms.dateFOA2020-06-10T11:14:52Z


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