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dc.contributor.authorZhang, Yuantao
dc.contributor.authorDeng, Gaoqiang
dc.contributor.authorYu, Ye
dc.contributor.authorWang, Yang
dc.contributor.authorZhao, Degang
dc.contributor.authorShi, Zhifeng
dc.contributor.authorZhang, Baolin
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2020-06-07T09:11:00Z
dc.date.available2020-06-07T09:11:00Z
dc.date.issued2020-05-28
dc.identifier.citationZhang, Y., Deng, G., Yu, Y., Wang, Y., Zhao, D., Shi, Z., … Li, X. (2020). Demonstration of N-polar III-nitride tunnel junction LED. ACS Photonics. doi:10.1021/acsphotonics.0c00269
dc.identifier.issn2330-4022
dc.identifier.issn2330-4022
dc.identifier.doi10.1021/acsphotonics.0c00269
dc.identifier.urihttp://hdl.handle.net/10754/663241
dc.description.abstractIn this study, we have demonstrated the N-polar III-nitride tunnel junction (TJ) light-emitting diode (LED). The LED was grown on the N-polar GaN template on sapphire substrates by metalorganic vapor phase epitaxy. The growth started with the n-GaN cladding layer whose doping condition was optimized by the periodic doping method and then the InGaN/GaN quantum well active region. Subsequently, the TJ was grown comprising a graded p-AlGaN layer, a thin undoped Al0.4Ga0.6N interlayer, and the topmost n-GaN layer. The I-V measurement show that the device resistance of the TJ LED was significantly reduced compared to the reference LED without the TJ due to enhanced hole injection. The electroluminescence measurement manifested that the emission and the external quantum efficiency of the TJ LED were greatly enhanced by ~70% compared with the reference LED. This work demonstrates that the TJ devices can be realized amid N-polarity that is promising for high-performance devices operating at various wavelength.
dc.description.sponsorshipThis work was supported by the National Key Research and Development Program (no.2016YFB0401801), the National Natural Science Foundation of China (nos. 61674068, and 61734001). X. Li acknowledges the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.
dc.description.sponsorshipNational Key Research and Development Program (no. 2016YFB0401801). National Natural Science Foundation of China (nos. 61674068, and 61734001). KAUST Baseline Fund BAS/1/1664-01-01. GCC Research Council Grant REP/1/3189-01-01. Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsphotonics.0c00269
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsphotonics.0c00269.
dc.titleDemonstration of N-polar III-nitride tunnel junction LED
dc.typeArticle
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalACS Photonics
dc.rights.embargodate2021-05-28
dc.eprint.versionPost-print
dc.contributor.institutionState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China.
dc.contributor.institutionState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, P. O. Box 912, Beijing 100083, China.
dc.contributor.institutionDepartment of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China.
kaust.personLi, Xiaohang
kaust.grant.numberBAS/1/1664-01-01
kaust.grant.numberREP/1/3189-01-01
kaust.grant.numberURF/1/3437-01-01
kaust.grant.numberURF/1/3771-01-01
refterms.dateFOA2020-06-07T09:11:58Z
kaust.acknowledged.supportUnitCompetitive Research
dc.date.published-online2020-05-28
dc.date.published-print2020-07-15


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