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dc.contributor.authorLin, Rongyu
dc.contributor.authorLiu, Xinwei
dc.contributor.authorLiu, Kaikai
dc.contributor.authorLu, Yi
dc.contributor.authorLiu, Xinke
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2020-06-04T13:07:23Z
dc.date.available2020-06-04T13:07:23Z
dc.date.issued2020-05-03
dc.date.submitted2020-05-03
dc.identifier.urihttp://hdl.handle.net/10754/663052
dc.description.abstractThe emerging wide bandgap BAlN alloys have potentials for improved III-nitride power devices including high electron mobility transistor (HEMT). Yet few relevant studies have been carried. In this work, we have investigated the use of the B0.14Al0.86N alloy as part or entirety of the interlayer between the GaN buffer and the AlGaN barrier in the conventional GaN-based high electron mobility transistor (HEMT). The numerical results show considerable improvement of the two-dimensional electron gas (2DEG) concentration with small 2DEG leakage into the ternary layer by replacing the conventional AlN interlayer by either the B0.14Al0.86N interlayer or the B0.14Al0.86N/AlN hybrid interlayer. Consequently, the transfer characteristics can be improved. The saturation current can be enhanced as well. For instance, the saturation currents for HEMTs with the 0.5 nm B0.14Al0.86N/0.5 nm AlN hybrid interlayer and the 1 nm B0.14Al0.86N interlayer are 5.8% and 2.2% higher than that for the AlN interlayer when VGS-Vth= +3 V.
dc.description.sponsorshipThe KAUST authors would like to acknowledge the support of like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.
dc.publisherarXiv
dc.relation.urlhttps://arxiv.org/pdf/2005.01161
dc.rightsArchived with thanks to arXiv
dc.subjectGaN
dc.subjectHEMT
dc.subjectBAlN
dc.subjectinterlayer
dc.subject2DEG
dc.titleBAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor
dc.typePreprint
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.eprint.versionPre-print
dc.contributor.institutionCollege of Materials Science and Engineering, College of Electronics and Information Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen 518060, China
dc.identifier.arxividarXiv:2005.01161
kaust.personLin, Rongyu
kaust.personLiu, Xinwei
kaust.personLiu, Kaikai
kaust.personLu, Yi
kaust.personLi, Xiaohang
kaust.grant.numberBAS/1/1664-01-01
kaust.grant.numberREP/1/3189-01-01
kaust.grant.numberURF/1/3437-01-01
kaust.grant.numberURF/1/3771-01-01
refterms.dateFOA2020-06-04T13:08:05Z
kaust.acknowledged.supportUnitCompetitive Research


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