Enhancement of critical current density in a superconducting NbSe2 step junction.
Type
ArticleKAUST Department
Advanced Membranes and Porous Materials Research CenterChemical Engineering Program
Material Science and Engineering
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant Number
OSR-2016-CRG5-2977URF/1/3435
Date
2020Embargo End Date
2021-06-02Submitted Date
2020-05-20Permanent link to this record
http://hdl.handle.net/10754/662980
Metadata
Show full item recordAbstract
We investigate the transport properties of a NbSe2 nanodevice consisting of a thin region, a thick region and a step junction. The superconducting critical current density of each region of the nanodevice has been studied as a function of temperature and magnetic field. We find that the critical current density has similar values for both the thin and thick regions away from the junction, while the critical current density of the thin region of the junction increases to approximately 1.8 times as compared with the values obtained for the other regions. We attribute such an enhancement of critical current density to the vortex pinning at the surface step. Our study verifies the enhancement of the critical current density by the geometrical-type pinning and sheds light on the application of 2D superconductors.Citation
He, X., Wen, Y., Zhang, C., Lai, Z., Chudnovsky, E. M., & Zhang, X. (2020). Enhancement of critical current density in a superconducting NbSe2 step junction. Nanoscale. doi:10.1039/d0nr03902kSponsors
This publication is based on research supported by the King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under the Award No. URF/1/3435-01-01 and OSR-2016-CRG5-2977.Publisher
Royal Society of Chemistry (RSC)Journal
NanoscalePubMed ID
32478360Additional Links
http://xlink.rsc.org/?DOI=D0NR03902Kae974a485f413a2113503eed53cd6c53
10.1039/d0nr03902k
Scopus Count
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