Room Temperature Operable Semiconducting Metal Oxide Chemi-Resistive NO2 Gas Sensor
Type
AbstractKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering
Electrical Engineering Program
Sensors Lab
Date
2020-05-12Online Publication Date
2020-05-12Print Publication Date
2020-05-01Permanent link to this record
http://hdl.handle.net/10754/662883
Metadata
Show full item recordAbstract
The quest for the room temperature operable semiconducting metal oxide gas sensors has come to an end. We fabricated an InGaZnO based chemi-resistive gas sensor, which is remarkably sensitive and selective to NO2 gas. Conventional semiconducting metal oxide gas sensors are active at high temperatures or in presence of light, which makes them power-hungry. The fabricated sensor is room temperature operable and requires light only to regenerate the device after exposure. NO2 has adverse effects on human health at concentration as low as 2 ppm. The measured limit of detection of the sensor is 100 ppb. Comprehensive NO2 adsorption studies were performed using kelvin probe force microscopy (KPFM) and X-ray photoelectron spectroscopy (XPS). The detailed mechanism of sensing and reviving is proposed. The fabricated sensor is compatible with CMOS process and can be integrated with the CMOS circuitry to make compact sensing system.Citation
Vijjapu, M. T., Surya, S., Yuvaraja, S., & Salama, K. N. (2020). Room Temperature Operable Semiconducting Metal Oxide Chemi-Resistive NO2 Gas Sensor. ECS Meeting Abstracts, MA2020-01(28), 2063–2063. doi:10.1149/ma2020-01282063mtgabsPublisher
The Electrochemical SocietyJournal
ECS Meeting AbstractsAdditional Links
https://iopscience.iop.org/article/10.1149/MA2020-01282063mtgabsae974a485f413a2113503eed53cd6c53
10.1149/ma2020-01282063mtgabs