Intrinsic Silicon Buffer Layer Improves Hole-Collecting Poly-Si Passivating Contact
Type
ArticleKAUST Department
KAUST Solar Center (KSC)Material Science and Engineering
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant Number
OSR-CRG URF/1/3383Date
2020-05-11Online Publication Date
2020-05-11Print Publication Date
2020-07Embargo End Date
2021-05-11Submitted Date
2020-02-04Permanent link to this record
http://hdl.handle.net/10754/662818
Metadata
Show full item recordAbstract
Passivating contacts consisting of doped polycrystalline silicon (poly-Si) on a thin tunnel-oxide enable excellent operating voltages for crystalline silicon solar cells. However, hole-collecting contacts based on boron-doped poly-Si do not yet reach their full surface-passivation potential, likely due to boron diffusion during annealing. In this work, the authors show how the insertion of a thin intrinsic silicon buffer layer between the silicon oxide and poly-Si is effective in improving the contact passivation. By tailoring the microstructure of the buffer layer, the chemical passivation and contact resistivity are simultaneously significantly improved. On device level, the buffer layer enables a ≈30 mV open-circuit voltage enhancement and 1.4% absolute gain in power conversion efficiency.Citation
Kang, J., Liu, W., Allen, T., De Bastiani, M., Yang, X., & De Wolf, S. (2020). Intrinsic Silicon Buffer Layer Improves Hole-Collecting Poly-Si Passivating Contact. Advanced Materials Interfaces, 2000188. doi:10.1002/admi.202000188Sponsors
J.K. and W.L. contributed equally to this work. This work was supported by funding from King Abdullah University of Science and Technology (KAUST) Oce of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383.Publisher
WileyJournal
Advanced Materials InterfacesAdditional Links
https://onlinelibrary.wiley.com/doi/abs/10.1002/admi.202000188ae974a485f413a2113503eed53cd6c53
10.1002/admi.202000188