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    Intrinsic Silicon Buffer Layer Improves Hole-Collecting Poly-Si Passivating Contact

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    AMI_Manuscript.pdf
    Size:
    1.140Mb
    Format:
    PDF
    Description:
    Accepted manuscript
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    Type
    Article
    Authors
    Kang, Jingxuan
    Liu, Wenzhu
    Allen, Thomas
    de Bastiani, Michele
    Yang, Xinbo
    De Wolf, Stefaan cc
    KAUST Department
    KAUST Solar Center (KSC)
    Material Science and Engineering
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    KAUST Grant Number
    OSR-CRG URF/1/3383
    Date
    2020-05-11
    Online Publication Date
    2020-05-11
    Print Publication Date
    2020-07
    Embargo End Date
    2021-05-11
    Submitted Date
    2020-02-04
    Permanent link to this record
    http://hdl.handle.net/10754/662818
    
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    Abstract
    Passivating contacts consisting of doped polycrystalline silicon (poly-Si) on a thin tunnel-oxide enable excellent operating voltages for crystalline silicon solar cells. However, hole-collecting contacts based on boron-doped poly-Si do not yet reach their full surface-passivation potential, likely due to boron diffusion during annealing. In this work, the authors show how the insertion of a thin intrinsic silicon buffer layer between the silicon oxide and poly-Si is effective in improving the contact passivation. By tailoring the microstructure of the buffer layer, the chemical passivation and contact resistivity are simultaneously significantly improved. On device level, the buffer layer enables a ≈30 mV open-circuit voltage enhancement and 1.4% absolute gain in power conversion efficiency.
    Citation
    Kang, J., Liu, W., Allen, T., De Bastiani, M., Yang, X., & De Wolf, S. (2020). Intrinsic Silicon Buffer Layer Improves Hole-Collecting Poly-Si Passivating Contact. Advanced Materials Interfaces, 2000188. doi:10.1002/admi.202000188
    Sponsors
    J.K. and W.L. contributed equally to this work. This work was supported by funding from King Abdullah University of Science and Technology (KAUST) Oce of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383.
    Publisher
    Wiley
    Journal
    Advanced Materials Interfaces
    DOI
    10.1002/admi.202000188
    Additional Links
    https://onlinelibrary.wiley.com/doi/abs/10.1002/admi.202000188
    ae974a485f413a2113503eed53cd6c53
    10.1002/admi.202000188
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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