Intrinsic Silicon Buffer Layer Improves Hole-Collecting Poly-Si Passivating Contact
KAUST DepartmentKAUST Solar Center (KSC)
Material Science and Engineering
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant NumberOSR-CRG URF/1/3383
Online Publication Date2020-05-11
Print Publication Date2020-07
Embargo End Date2021-05-11
Permanent link to this recordhttp://hdl.handle.net/10754/662818
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AbstractPassivating contacts consisting of doped polycrystalline silicon (poly-Si) on a thin tunnel-oxide enable excellent operating voltages for crystalline silicon solar cells. However, hole-collecting contacts based on boron-doped poly-Si do not yet reach their full surface-passivation potential, likely due to boron diffusion during annealing. In this work, the authors show how the insertion of a thin intrinsic silicon buffer layer between the silicon oxide and poly-Si is effective in improving the contact passivation. By tailoring the microstructure of the buffer layer, the chemical passivation and contact resistivity are simultaneously significantly improved. On device level, the buffer layer enables a ≈30 mV open-circuit voltage enhancement and 1.4% absolute gain in power conversion efficiency.
CitationKang, J., Liu, W., Allen, T., De Bastiani, M., Yang, X., & De Wolf, S. (2020). Intrinsic Silicon Buffer Layer Improves Hole-Collecting Poly-Si Passivating Contact. Advanced Materials Interfaces, 2000188. doi:10.1002/admi.202000188
SponsorsJ.K. and W.L. contributed equally to this work. This work was supported by funding from King Abdullah University of Science and Technology (KAUST) Oce of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383.
JournalAdvanced Materials Interfaces