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dc.contributor.authorAlmaghrabi, Latifah
dc.contributor.authorHuang, Chen
dc.contributor.authorPriante, Davide
dc.contributor.authorTian, Meng
dc.contributor.authorMin, Jung-Wook
dc.contributor.authorZhao, Chao
dc.contributor.authorZhang, Huafan
dc.contributor.authorSubedi, Ram Chandra
dc.contributor.authorAlhashim, Hala H.
dc.contributor.authorSun, Haiding
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.identifier.citationAl-Maghrabi, L., Huang, C., Priante, D., Tian, M., Min, J.-W., Zhao, C., … Ooi, B. S. (2020). Piezotronic AlGaN nanowire Schottky junctions grown on a metal substrate. AIP Advances, 10(5), 055014. doi:10.1063/5.0008112
dc.description.abstractThe non-centrosymmetric crystal structures of polar-semiconductors comprising GaN, InN, AlN, and ZnO intrigued the scientific community in investigating their potential for a strain-induced nano-energy generation. The coupled semiconducting and piezoelectric properties produce a piezo-potential that modulates the charge transport across their heterostructure interfaces. By using conductive-atomic force microscopy, we investigate the mechanism that gives rise to the piezotronic effect in AlGaN nanowires (NWs) grown on a molybdenum (Mo) substrate. By applying external bias and force on the NWs/Mo structure using a Pt–Ir probe, the charge transport across the two adjoining Schottky junctions is modulated due to the change in the apparent Schottky barrier heights (SBHs) that result from the strain-induced piezo-potential. We measured an increase in the SBH of 98.12 meV with respect to the background force, which corresponds to an SBH variation $\textstyle\frac{\partial\phi}{\partial F}$ of 6.24 meV/nN for the semiconductor/Ti/Mo interface. The SBH modulation, which is responsible for the piezotronic effect, is further studied by measuring the temperature-dependent I–V curves from room temperature to 398 K. The insights gained from the unique structure of AlGaN NWs/Mo shed light on the electronic properties of the metal-semiconductor interfaces, as well as on the potential application of AlGaN NW piezoelectric nanomaterials in optoelectronics, sensors, and energy generation applications.
dc.description.sponsorshipWe acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline Funding No. BAS/1/1614-01-01, MBE equipment Funding Nos. C/M-20000-12-001-77 and KCR/1/4055-01-01, the National Natural Science Foundation of China under Grant No. 61905236, the University of Science and Technology of China (USTC) under Grant No. KY2100000081, the USTC National Synchrotron Radiation Laboratory Grant No. KY2100000099.
dc.publisherAIP Publishing
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (
dc.titlePiezotronic AlGaN nanowire Schottky junctions grown on a metal substrate
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Characterization
dc.identifier.journalAIP Advances
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionSchool of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, China
dc.contributor.institutionDepartment of Physics, College of Science, Imam Abdulrahman Bin Faisal University, Dammam 31441, Saudi Arabia
kaust.personAlmaghrabi, Latifah
kaust.personHuang, Chen
kaust.personPriante, Davide
kaust.personTian, Meng
kaust.personMin, Jung-Wook
kaust.personZhao, Chao
kaust.personZhang, Huafan
kaust.personSubedi, Ram
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.

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