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    Low-Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing

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    Name:
    Accepted Manuscript File_ E. Yarali et al. AEleM-2020.pdf
    Size:
    1.141Mb
    Format:
    PDF
    Description:
    Accepted manuscript
    Embargo End Date:
    2021-05-08
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    Type
    Article
    Authors
    Yarali, Emre
    Faber, Hendrik cc
    Yengel, Emre cc
    Seitkhan, Akmaral cc
    Loganathan, Kalaivanan
    Harrison, George T.
    Adilbekova, Begimai
    Lin, Yuanbao
    Ma, Chun cc
    Firdaus, Yuliar cc
    Anthopoulos, Thomas D. cc
    KAUST Department
    KAUST Solar Center (KSC)
    Material Science and Engineering
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2020-05-08
    Online Publication Date
    2020-05-08
    Print Publication Date
    2020-06
    Embargo End Date
    2021-05-08
    Submitted Date
    2020-01-07
    Permanent link to this record
    http://hdl.handle.net/10754/662807
    
    Metadata
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    Abstract
    Solution-processed metal oxide thin-film transistors (TFTs) represent a promising technology for applications in existing but also emerging large-area electronics. However, high process temperatures and lengthy annealing times represent two remaining technical challenges. Different approaches aiming to address these challenges have been proposed but progress remains modest. Here, the development of high electron mobility metal oxide TFTs based on photonically converted Al2O3/ZrO2 and In2O3/ZnO bilayers acting as the high-k dielectric and electron-transporting channel, respectively is described. Sequential solution-phase deposition and photonic processing lead to low substrate temperature (<200 °C) while minimizing the overall process time to less than 60 s without compromising the quality of the formed layers. The bilayer Al2O3/ZrO2 dielectric exhibits low leakage current density (10−6 A cm−2 at 1 MV cm−1), high geometric capacitance (≈120 nF cm−2) and breakdown electric field of ≈1 MV cm−1. Combining Al2O3/ZrO2 with a photonically converted In2O3/ZnO heterojunction channels, results in TFTs with high electron mobility (19 cm2 V−1 s−1), low operation voltage (≤2 V), high current on/off ratio (>106), and low subthreshold swing (108 mV dec−1), that can be manufactured even onto thermally sensitive polymer substrates. The work is a significant step toward all-photonic processed metal oxide electronics.
    Citation
    Yarali, E., Faber, H., Yengel, E., Seitkhan, A., Loganathan, K., Harrison, G. T., … Anthopoulos, T. D. (2020). Low-Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing. Advanced Electronic Materials, 2000028. doi:10.1002/aelm.202000028
    Sponsors
    The authors are grateful to KAUST for the financial support.
    Publisher
    Wiley
    Journal
    Advanced Electronic Materials
    DOI
    10.1002/aelm.202000028
    Additional Links
    https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.202000028
    ae974a485f413a2113503eed53cd6c53
    10.1002/aelm.202000028
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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