Fabrication of bifacial sandwiched heterojunction photoconductor – Type and MAI passivated photodiode – Type perovskite photodetectors
KAUST DepartmentFunctional Nanomaterials Lab (FuNL)
KAUST Catalysis Center (KCC)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2020-04-07
Print Publication Date2020-09
Embargo End Date2022-04-29
Permanent link to this recordhttp://hdl.handle.net/10754/662738
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AbstractIn this work, we report novel heterojunctions perovskite photodetector architecture utilizing metal-free contact electrodes. The metal-free contact electrodes were exploited to fabricate photoconductor – type perovskite photodetector. The attempt to investigate the effect of passivating the active layers of the as – proposed architecture with electrolytic MAI gave rise to a photodiode – type perovskite photodetector. These two photodetector types are sensitive and responsive to light sources through their dual transparent electrodes faces (N-face and T-face). We also showed that passivating the surfaces of the sandwiched perovskite layers with MAI solution improves the performance of the fabricated photodetectors, where the detectivity is enhanced by a factor of hundred compared to non-passivated devices. The proposed photodetectors architectures demonstrate champion dual-detectivity (1.77 × 1014 Jones for N-face and 4.64 × 1014 Jones for T-face), dual-responsivity (1.94 × 103 A/W for N-face and 1.61 × 103 A/W for T-face) and high dual – sensitivity (3.3 × 102 for N-face and 1.1 × 102 for T-face). All these properties were obtained from the two faces of the MAI passivated photodetectors under 0.02 mW/cm2 red LED illumination and at −2.0 bias voltage. This novel architecture may scale up towards building energy and cost efficient classes of optoelectronic and photovoltaic devices which are responsive to light in two directions.
CitationPopoola, A., Gondal, M. A., Popoola, I. K., Oloore, L. E., & Bakr, O. M. (2020). Fabrication of bifacial sandwiched heterojunction photoconductor – Type and MAI passivated photodiode – Type perovskite photodetectors. Organic Electronics, 84, 105730. doi:10.1016/j.orgel.2020.105730
SponsorsThe authors acknowledge the funding support provided by the King Abdullah City for Atomic and Renewable Energy (K.A.CARE) through project KACARE182-GSGP-11 and KACARE182-RFP-02. The authors are thankful to King Fahd University of Petroleum & Minerals (KFUPM), Dhahran, Saudi Arabia to support this work under Project #RG181002.