Epitaxial growth of β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering
Electrical Engineering Program
Photonics Laboratory
Thin Films & Characterization
Date
2020-03-06Online Publication Date
2020-03-06Print Publication Date
2020-03-05Permanent link to this record
http://hdl.handle.net/10754/662724
Metadata
Show full item recordAbstract
Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ϵ-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction measurements and transmission electron microscopy images confirmed a β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructure with rocking-curve widths of 1.4° (β-Ga2O3 (603)) and 0.6° (ϵ-Ga2O3 (006)). The crystallographic orientation relationships between c-plane sapphire and the heterogeneously nucleated ϵ-Ga2O3 buffer layer, as well as between the ϵ-Ga2O3 and β-Ga2O3 heterogeneous layers, were determined. Our study will aid in developing novel deep-ultraviolet optoelectronic devices, such as solar-blind and metal-insulator-semiconductor deep-ultraviolet photodiodes.Citation
Alfaraj, N. A., Li, K.-H., Kang, C. H., Braic, L. V., Ng, T. K., & Ooi, B. S. (2020). Epitaxial growth of [beta]-Ga2O3/[epsilon]-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics. Oxide-Based Materials and Devices XI. doi:10.1117/12.2544427Publisher
SPIEConference/Event name
Oxide-based Materials and Devices XI 2020ISBN
9781510633254ae974a485f413a2113503eed53cd6c53
10.1117/12.2544427