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    Epitaxial growth of β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics

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    epitaxial growth.pdf
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    Type
    Conference Paper
    Authors
    Alfaraj, Nasir cc
    Li, Kuang Hui
    Kang, Chun Hong
    Braic, Laurentiu
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering
    Electrical Engineering Program
    Photonics Laboratory
    Thin Films & Characterization
    Date
    2020-03-06
    Online Publication Date
    2020-03-06
    Print Publication Date
    2020-03-05
    Permanent link to this record
    http://hdl.handle.net/10754/662724
    
    Metadata
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    Abstract
    Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ϵ-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction measurements and transmission electron microscopy images confirmed a β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructure with rocking-curve widths of 1.4° (β-Ga2O3 (603)) and 0.6° (ϵ-Ga2O3 (006)). The crystallographic orientation relationships between c-plane sapphire and the heterogeneously nucleated ϵ-Ga2O3 buffer layer, as well as between the ϵ-Ga2O3 and β-Ga2O3 heterogeneous layers, were determined. Our study will aid in developing novel deep-ultraviolet optoelectronic devices, such as solar-blind and metal-insulator-semiconductor deep-ultraviolet photodiodes.
    Citation
    Alfaraj, N. A., Li, K.-H., Kang, C. H., Braic, L. V., Ng, T. K., & Ooi, B. S. (2020). Epitaxial growth of [beta]-Ga2O3/[epsilon]-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics. Oxide-Based Materials and Devices XI. doi:10.1117/12.2544427
    Publisher
    SPIE
    Conference/Event name
    Oxide-based Materials and Devices XI 2020
    ISBN
    9781510633254
    DOI
    10.1117/12.2544427
    Additional Links
    https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11281/2544427/Epitaxial-growth-of-beta-Ga2O3-epsilon-Ga2O3-polymorphic-heterostructures-on/10.1117/12.2544427.full
    ae974a485f413a2113503eed53cd6c53
    10.1117/12.2544427
    Scopus Count
    Collections
    Conference Papers; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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