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dc.contributor.authorZhou, Liang
dc.contributor.authorChen, Junshu
dc.contributor.authorChen, Xiaobin
dc.contributor.authorXi, Bin
dc.contributor.authorQiu, Yang
dc.contributor.authorZhang, Junwei
dc.contributor.authorWang, Linjing
dc.contributor.authorZhang, Runnan
dc.contributor.authorYe, Bicong
dc.contributor.authorChen, Pingbo
dc.contributor.authorZhang, Xixiang
dc.contributor.authorGuo, Guo-Ping
dc.contributor.authorYu, Dapeng
dc.contributor.authorMei, Jia-Wei
dc.contributor.authorYe, Fei
dc.contributor.authorWang, Gan
dc.contributor.authorHe, Hongtao
dc.date.accessioned2020-05-04T11:08:13Z
dc.date.available2020-05-04T11:08:13Z
dc.date.issued2020-04-27
dc.identifier.citationZhou, L., Chen, J., Chen, X., Xi, B., Qiu, Y., Zhang, J., … He, H. (2020). Topological Hall Effect in Traditional Ferromagnet Embedded with Black-Phosphorus-Like Bismuth Nanosheets. ACS Applied Materials & Interfaces. doi:10.1021/acsami.0c04447
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.doi10.1021/acsami.0c04447
dc.identifier.urihttp://hdl.handle.net/10754/662717
dc.description.abstractTopological Hall effect is an abnormal Hall response arising from the scalar spin chirality of chiral magnetic textures. Up to now, such an effect is only observed in certain special materials, but rarely in traditional ferromagnets. In this work, we have implemented the molecular beam epitaxy technique to successfully embed black-phosphorus-like bismuth nanosheets with strong spin orbit coupling into the bulk of chromium telluride Cr2Te3, as evidenced by atomically resolved energy dispersive X-ray spectroscopy mapping. Distinctive from pristine Cr2Te3, these Bi-embedded Cr2Te3 epitaxial films exhibit not only pronounced topological Hall effects, but also magnetoresistivity anomalies and differential magnetic susceptibility plateaus. All these experimental features point to the possible emergence of magnetic skyrmions in Bi-embedded Cr2Te3, which is further supported by our numerical simulations with all input parameters obtained from the first-principle calculations. Therefore, our work demonstrates a new efficient way to induce skyrmions in ferromagnets, as well as the topological Hall effect by embedding nanosheets with strong spin-orbit couplings.
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China (No. 11574129, 11774143, 61734008, 51404293 and 11374135, 11774300), the National Key Research and Development Program of China (No. 2016YFA0301703), the Natural Science Foundation of Guangdong Province (No. 2015A030313840, and 2017A030313033), the State Key Laboratory of Low-Dimensional Quantum Physics (No. KF201602), Technology and Innovation Commission of Shenzhen Municipality (No. JCYJ20160531190254691, JCYJ20160531190535310, KQJSCX20170727090712763, ZDSYS201703031659262, and JCYJ20170412152334605). J.W.M was partially supported by the program for Guangdong Introducing Innovative and Entrepreneurial Teams (No. 2017ZT07C062). J. Zhang and X. Zhang were supported by King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under Award No: CRF-2015-2549-CRG4.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsami.0c04447
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.0c04447.
dc.titleTopological Hall Effect in Traditional Ferromagnet Embedded with Black-Phosphorus-Like Bismuth Nanosheets
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.identifier.journalACS Applied Materials & Interfaces
dc.rights.embargodate2021-04-27
dc.eprint.versionPost-print
dc.contributor.institutionShenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
dc.contributor.institutionDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore.
dc.contributor.institutionSchool of Science, Harbin Institute of Technology, Shenzhen 518055, China.
dc.contributor.institutionMaterials Characterization and Preparation Center, Southern University of Science and Technology, Shenzhen 518055, China.
dc.contributor.institutionKey Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China.
dc.contributor.institutionShenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China.
kaust.personZhang, Junwei
kaust.personZhang, Xixiang
kaust.grant.numberCRF-2015-2549-CRG4
refterms.dateFOA2020-05-04T11:10:47Z
kaust.acknowledged.supportUnitOffice of Sponsored Research (OSR)
dc.date.published-online2020-04-27
dc.date.published-print2020-06-03


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