• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguideTheses and Dissertations LibguideSubmit an Item

    Statistics

    Display statistics

    THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    pagination_APSUSC_146422_corrected.pdf
    Size:
    2.090Mb
    Format:
    PDF
    Description:
    Accepted Manuscript
    Download
    Type
    Article
    Authors
    Park, Kwangwook
    Min, Jung-Wook
    Subedi, Ram Chandra cc
    Shakfa, Mohammad Khaled
    Davaasuren, Bambar cc
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    Kang, Chul
    Kim, Jongmin
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Photonics Laboratory
    Physical Characterization
    KAUST Grant Number
    BAS/1/1614-01-01
    Date
    2020-04-25
    Online Publication Date
    2020-04-25
    Print Publication Date
    2020-08
    Embargo End Date
    2022-04-25
    Submitted Date
    2019-11-14
    Permanent link to this record
    http://hdl.handle.net/10754/662704
    
    Metadata
    Show full item record
    Abstract
    We investigate the coalescent GaN nanorods grown on Si (100) and Si (111) substrates. Our results clearly show that GaN nanorods grown on both substrates have the same structural, optical and morphological properties. However, we observed a clear difference in terahertz (THz) radiation between the two sets of GaN nanorods. With high gallium molecular beam flux around 6 × 10−7 Torr, coalescent GaN nanorods grown on Si (111) substrates exhibit observable THz radiation, while the ones grown on Si (100) substrates do not. The inactive THz behavior of the GaN nanorods grown on Si (100) substrate is due to the presence of randomly-rotated GaN nanorods during coalescence. The dissimilarity in THz radiation behavior between the two GaN nanorods, i.e. interfering incident optical pulse thus exhibiting inactive THz radiation from GaN nanorods grown on (100) substrate indicate that the nanorods are attractive for further THz applications not limited to III-N materials system but also other materials systems.
    Citation
    Park, K., Min, J.-W., Subedi, R. C., Shakfa, M. K., Davaasuren, B., Ng, T. K., … Kim, J. (2020). THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates. Applied Surface Science, 522, 146422. doi:10.1016/j.apsusc.2020.146422
    Sponsors
    KP thanks Prof. Ji-Sang Park of Kyungpook National University, Republic of Korea and Dr. Kirstin Alberi of National Renewable Energy Laboratory (NREL), United States of America for their useful discussions. CK acknowledge that this work was supported by the Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) grant funded by the GIST in 2020 and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No. 2019R1F1A1063156). BSO, TKN, JWM, MKS and RS acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding No. BAS/1/1614-01-01.
    Publisher
    Elsevier BV
    Journal
    Applied Surface Science
    DOI
    10.1016/j.apsusc.2020.146422
    Additional Links
    https://linkinghub.elsevier.com/retrieve/pii/S016943322031179X
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.apsusc.2020.146422
    Scopus Count
    Collections
    Articles; Electrical and Computer Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

    entitlement

     
    DSpace software copyright © 2002-2023  DuraSpace
    Quick Guide | Contact Us | KAUST University Library
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.