Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/662676
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AbstractWe investigated the effects of size on electrical and optical properties of InGaN-based red light-emitting diodes (LEDs) by designing rectangular chips with different mesa lengths. Larger chips exhibited lower forward voltages because of their lower series resistances. A larger chip helped to realize a longer emission wavelength, narrower full-width at half maximum, and higher external quantum efficiency. However, temperature-dependent electroluminescence measurements indicated that larger chips are detrimental to applications where high temperature tolerance is required. In contrast, a smaller red LED chip achieved a high characteristic temperature of 399 K and a small redshift tendency of 0.066 nm K1 , thus showing potential for temperature tolerant lighting applications.
CitationZhuang, Z., Iida, D., & Ohkawa, K. (2020). Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes. Applied Physics Letters, 116(17), 173501. doi:10.1063/5.0006910
JournalApplied Physics Letters
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