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dc.contributor.authorZhang, Junli
dc.contributor.authorChen, Jie
dc.contributor.authorLi, Peng
dc.contributor.authorZhang, Chenhui
dc.contributor.authorHou, Zhipeng
dc.contributor.authorWen, Yan
dc.contributor.authorZhang, Qiang
dc.contributor.authorWang, Wenhong
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2020-06-15T04:16:03Z
dc.date.available2020-04-27T15:01:12Z
dc.date.available2020-06-15T04:16:03Z
dc.date.issued2020-06-05
dc.date.submitted2020-01-30
dc.identifier.citationZhang, J., Chen, J., Li, P., Zhang, C., Hou, Z., Wen, Y., … Zhang, X. (2020). Topological electronic state and anisotropic Fermi surface in half-Heusler GdPtBi. Journal of Physics: Condensed Matter. doi:10.1088/1361-648x/ab8ec8
dc.identifier.issn0953-8984
dc.identifier.issn1361-648X
dc.identifier.doi10.1088/1361-648x/ab8ec8
dc.identifier.urihttp://hdl.handle.net/10754/662666
dc.description.abstractHalf-Heusler alloys possess unique and desirable physical properties due to their thermoelectricity, magnetism, superconductivity, and weak antilocalization effects. These properties have become of particular interest since the recent discovery of topological Weyl semimetal state for which the electronic bands are dispersed linearly around one pair of Weyl nodes, with opposite chirality (i.e., chiral anomaly). Here, we report the transport signatures of topological electronic state in a half-Heusler GdPtBi single crystal. We show that the non-trivial  Berry phase, negative magnetoresistance and giant planner Hall effect arise from the chiral anomaly and that the Shubnikov-de Haas (SdH) oscillation frequency in GdPtBi is angle-dependent with an anisotropic Fermi surface (FS). All transport signatures not only demonstrate the topological electronic state in half-Heusler GdPtBi crystals, but also describe the shape of the anisotropy FS.
dc.description.sponsorshipThis work was financially supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR), Saudi Arabia, under Award No. CRF-2015-2549-CRG4, and the China Postdoctoral Science Foundation No. Y6BK011M51. W.H.W acknowledges support from the National Natural Science Foundation of China (No.11974406) and Fujian Innovation Academy, Chinese Academy of Sciences.
dc.language.isoen
dc.publisherIOP Publishing
dc.relation.urlhttps://iopscience.iop.org/article/10.1088/1361-648X/ab8ec8
dc.rightsOriginal content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleTopological electronic state and anisotropic Fermi surface in half-Heusler GdPtBi
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentThin Films & Characterization
dc.identifier.journalJournal of Physics: Condensed Matter
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionInstitute of Physics, Chinese Academy of Sciences, Beijing, CHINA.
dc.contributor.institutionInstitute of Physics, Chinese Academy of Sciences, Beijing, Guangdong, CHINA.
dc.contributor.institutionBeijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences - Beijing National Science Library, Institute of Physics Chinese Academy of Sciences, Beijing 100190, Beijing, CHINA
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
pubs.publication-statusPublished
kaust.personZhang, Junli
kaust.personLi, Peng
kaust.personZhang, Chenhui
kaust.personWen, Yan
kaust.personZhang, Qiang
kaust.personZhang, Xixiang
kaust.grant.numberCRF-2015-2549-CRG4
dc.date.accepted2020-04-30
refterms.dateFOA2020-06-16T03:09:06Z
kaust.acknowledged.supportUnitOffice of Sponsored Research (OSR)
dc.date.published-online2020-06-05
dc.date.published-print2020-08-19


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