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dc.contributor.authorZhang, Junli
dc.contributor.authorChen, Jie
dc.contributor.authorLi, Peng
dc.contributor.authorZhang, Chenhui
dc.contributor.authorHou, Zhipeng
dc.contributor.authorWen, Yan
dc.contributor.authorZhang, Qiang
dc.contributor.authorWang, Wenhong
dc.contributor.authorZhang, Xixiang
dc.identifier.citationZhang, J., Chen, J., Li, P., Zhang, C., Hou, Z., Wen, Y., … Zhang, X. (2020). Topological electronic state and anisotropic Fermi surface in half-Heusler GdPtBi. Journal of Physics: Condensed Matter. doi:10.1088/1361-648x/ab8ec8
dc.description.abstractHalf-Heusler alloys possess unique and desirable physical properties due to their thermoelectricity, magnetism, superconductivity, and weak antilocalization effects. These properties have become of particular interest since the recent discovery of topological Weyl semimetal state for which the electronic bands are dispersed linearly around one pair of Weyl nodes, with opposite chirality (i.e., chiral anomaly). Here, we report the transport signatures of topological electronic state in a half-Heusler GdPtBi single crystal. We show that the non-trivial  Berry phase, negative magnetoresistance and giant planner Hall effect arise from the chiral anomaly and that the Shubnikov-de Haas (SdH) oscillation frequency in GdPtBi is angle-dependent with an anisotropic Fermi surface (FS). All transport signatures not only demonstrate the topological electronic state in half-Heusler GdPtBi crystals, but also describe the shape of the anisotropy FS.
dc.description.sponsorshipThis work was financially supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR), Saudi Arabia, under Award No. CRF-2015-2549-CRG4, and the China Postdoctoral Science Foundation No. Y6BK011M51. W.H.W acknowledges support from the National Natural Science Foundation of China (No.11974406) and Fujian Innovation Academy, Chinese Academy of Sciences.
dc.publisherIOP Publishing
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published in Journal of Physics: Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at
dc.titleTopological electronic state and anisotropic Fermi surface in half-Heusler GdPtBi
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentThin Films & Characterization
dc.identifier.journalJournal of Physics: Condensed Matter
dc.contributor.institutionInstitute of Physics, Chinese Academy of Sciences, Beijing, CHINA.
dc.contributor.institutionInstitute of Physics, Chinese Academy of Sciences, Beijing, Guangdong, CHINA.
dc.contributor.institutionBeijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences - Beijing National Science Library, Institute of Physics Chinese Academy of Sciences, Beijing 100190, Beijing, CHINA
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personZhang, Junli
kaust.personLi, Peng
kaust.personZhang, Chenhui
kaust.personWen, Yan
kaust.personZhang, Qiang
kaust.personZhang, Xixiang
kaust.acknowledged.supportUnitOffice of Sponsored Research (OSR)

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