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Topological electronic state and anisotropic Fermi surface in half-Heusler GdPtBi
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2021-04-27
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ArticleAuthors
Zhang, Junli
Chen, Jie
Li, Peng

Zhang, Chenhui
Hou, Zhipeng
Wen, Yan
Zhang, Qiang

Wang, Wenhong

Zhang, Xixiang

KAUST Department
Physical Science and Engineering (PSE) DivisionMaterial Science and Engineering Program
Imaging and Characterization Core Lab
Nanofabrication Core Lab
Thin Films & Characterization
KAUST Grant Number
CRF-2015-2549-CRG4Date
2020-04-30Embargo End Date
2021-04-27Submitted Date
2020-01-30Permanent link to this record
http://hdl.handle.net/10754/662666.1
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Half-Heusler alloys possess unique and desirable physical properties due to their thermoelectricity, magnetism, superconductivity, and weak antilocalization effects. These properties have become of particular interest since the recent discovery of topological Weyl semimetal state for which the electronic bands are dispersed linearly around one pair of Weyl nodes, with opposite chirality (i.e., chiral anomaly). Here, we report the transport signatures of topological electronic state in a half-Heusler GdPtBi single crystal. We show that the non-trivial Berry phase, negative magnetoresistance and giant planner Hall effect arise from the chiral anomaly and that the Shubnikov-de Haas (SdH) oscillation frequency in GdPtBi is angle-dependent with an anisotropic Fermi surface (FS). All transport signatures not only demonstrate the topological electronic state in half-Heusler GdPtBi crystals, but also describe the shape of the anisotropy FS.Citation
Zhang, J., Chen, J., Li, P., Zhang, C., Hou, Z., Wen, Y., … Zhang, X. (2020). Topological electronic state and anisotropic Fermi surface in half-Heusler GdPtBi. Journal of Physics: Condensed Matter. doi:10.1088/1361-648x/ab8ec8Sponsors
This work was financially supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR), Saudi Arabia, under Award No. CRF-2015-2549-CRG4, and the China Postdoctoral Science Foundation No. Y6BK011M51. W.H.W acknowledges support from the National Natural Science Foundation of China (No.11974406) and Fujian Innovation Academy, Chinese Academy of Sciences.Publisher
IOP PublishingAdditional Links
https://iopscience.iop.org/article/10.1088/1361-648X/ab8ec8ae974a485f413a2113503eed53cd6c53
10.1088/1361-648x/ab8ec8