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Topological electronic state and anisotropic Fermi surface in half-Heusler GdPtBi
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Material Science and Engineering Program
Imaging and Characterization Core Lab
Nanofabrication Core Lab
Thin Films & Characterization
KAUST Grant NumberCRF-2015-2549-CRG4
Embargo End Date2021-04-27
Permanent link to this recordhttp://hdl.handle.net/10754/662666.1
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AbstractHalf-Heusler alloys possess unique and desirable physical properties due to their thermoelectricity, magnetism, superconductivity, and weak antilocalization effects. These properties have become of particular interest since the recent discovery of topological Weyl semimetal state for which the electronic bands are dispersed linearly around one pair of Weyl nodes, with opposite chirality (i.e., chiral anomaly). Here, we report the transport signatures of topological electronic state in a half-Heusler GdPtBi single crystal. We show that the non-trivial Berry phase, negative magnetoresistance and giant planner Hall effect arise from the chiral anomaly and that the Shubnikov-de Haas (SdH) oscillation frequency in GdPtBi is angle-dependent with an anisotropic Fermi surface (FS). All transport signatures not only demonstrate the topological electronic state in half-Heusler GdPtBi crystals, but also describe the shape of the anisotropy FS.
CitationZhang, J., Chen, J., Li, P., Zhang, C., Hou, Z., Wen, Y., … Zhang, X. (2020). Topological electronic state and anisotropic Fermi surface in half-Heusler GdPtBi. Journal of Physics: Condensed Matter. doi:10.1088/1361-648x/ab8ec8
SponsorsThis work was financially supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR), Saudi Arabia, under Award No. CRF-2015-2549-CRG4, and the China Postdoctoral Science Foundation No. Y6BK011M51. W.H.W acknowledges support from the National Natural Science Foundation of China (No.11974406) and Fujian Innovation Academy, Chinese Academy of Sciences.