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    Fabrication and Characterization of GaN-Based Superluminescent Diode for Solid-State Lighting and Visible Light Communication

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    Dissertation_Abdullah Alatawi_Final.pdf
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    Type
    Dissertation
    Authors
    Alatawi, Abdullah cc
    Advisors
    Ooi, Boon S. cc
    Committee members
    Ohkawa, Kazuhiro cc
    Mohammed, Omar F. cc
    Zhao, HongPing
    Program
    Electrical Engineering
    KAUST Department
    Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
    Date
    2020-04
    Permanent link to this record
    http://hdl.handle.net/10754/662640
    
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    Abstract
    To date, group-III-nitride has undergone continuous improvements to provide a broader range of industrial applications, such as solid-state lighting (SSL), visible light communications (VLC), and light projection. Recently, VLC has attained substantial attention in the field of wireless communication because it offers ~ 370 THz of bandwidth of unregulated visible spectrum, which makes it a critical factor in the evolution of the 5G networks and beyond. GaN-based light-emitting diode (LED) and laser diode (LD) have become increasingly appealing in energy-sufficient SSL replacing conventional light sources. However, III- nitride LEDs suffer from efficiency-droop in their external quantum efficiency associated with high current densities, and their modulation bandwidth is limited to 10 ~ 100 MHz. Although LDs have shown gigabit-modulation bandwidth, unfavorable artifacts, such as speckles are observed, which may raise a concern about eye safety. This dissertation is devoted to the fabrication and electrical and optical characterization of a new class of III-nitride light-emitter known as superluminescent diode (SLD). SLD works in an amplified spontaneous emission (ASE) regime, and it combines several advantages from both LD and LED, such as droop-free, speckle-free, low-spatial coherence, broader emission, high-optical power, and directional beam. Here, SLDs were fabricated by a focused ion beam by tilting the front facet of the waveguide to suppress the lasing mode. They showed a high-power of 474 mW on c-plane GaN-substrate with a large spectral bandwidth of 6.5 nm at an optical power of 105 mW. To generate SLD- based white light, a YAG-phosphor-plate was integrated, and a CRI of 85.1 and CCT of 3392 K were measured. For the VLC link, SLD showed record high-data rates of 1.45 Gbps and 3.4 Gbps by OOK and DMT modulation schemes, respectively. Additionally, a widely single- and dual-wavelength tunability were designed using SLD-based external cavity (SLD-EC) configuration for a tunable blue laser source. These results underscore the practicality of c-plane SLDs in realizing high-power, high data rate, speckle-free, and droop-free SSL-VLC apparatus. Additionally, the SLD-EC configuration allows a wide range of applications, including biomedical applications, optical communication, and high-resolution spectroscopy.
    Citation
    Alatawi, A. (2020). Fabrication and Characterization of GaN-Based Superluminescent Diode for Solid-State Lighting and Visible Light Communication. KAUST Research Repository. https://doi.org/10.25781/KAUST-KB6NG
    DOI
    10.25781/KAUST-KB6NG
    ae974a485f413a2113503eed53cd6c53
    10.25781/KAUST-KB6NG
    Scopus Count
    Collections
    PhD Dissertations; Electrical and Computer Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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