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dc.contributor.authorIida, Daisuke
dc.contributor.authorZhuang, Zhe
dc.contributor.authorKirilenko, Pavel
dc.contributor.authorVelazquez-Rizo, Martin
dc.contributor.authorNajmi, Mohammed A.
dc.contributor.authorOhkawa, Kazuhiro
dc.date.accessioned2020-04-22T06:38:18Z
dc.date.available2020-04-22T06:38:18Z
dc.date.issued2020-04-20
dc.date.submitted2019-12-14
dc.identifier.citationIida, D., Zhuang, Z., Kirilenko, P., Velazquez-Rizo, M., Najmi, M. A., & Ohkawa, K. (2020). 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress. Applied Physics Letters, 116(16), 162101. doi:10.1063/1.5142538
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.5142538
dc.identifier.urihttp://hdl.handle.net/10754/662608
dc.description.abstractThis work investigates the influence of residual stress on the performance of InGaN-based red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers. The residual in-plane stress in the LED structure depends on the thickness of the underlying layer. Decreased residual in-plane stress resulting from the increased thickness of the underlying n-GaN layers improves the crystalline quality of the InGaN active region by allowing for a higher growth temperature. The electroluminescence intensity of the InGaN-based red LEDs is increased by a factor of 1.3 when the thickness of the underlying n-GaN layer is increased from 2 to 8 lm. Using 8-lm-thick underlying n-GaN layers, 633-nm-wavelength red LEDs are realized with a light-output power of 0.64 mW and an external quantum efficiency of 1.6% at 20 mA. The improved external quantum efficiency of the LEDs can be attributed to the lower residual in-plane stress in the underlying GaN layers.
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.5142538
dc.relation.urlhttps://aip.scitation.org/doi/pdf/10.1063/1.5142538
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY).
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.title633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.identifier.volume116
dc.identifier.issue16
dc.identifier.pages162101
kaust.personIida, Daisuke
kaust.personZhuang, Zhe
kaust.personKirilenko, Pavel
kaust.personVelazquez-Rizo, Martin
kaust.personNajmi, Mohammed A.
kaust.personOhkawa, Kazuhiro
dc.date.accepted2020-03-31
refterms.dateFOA2020-04-22T06:39:11Z


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