633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
Najmi, Mohammed A.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/662608
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AbstractThis work investigates the influence of residual stress on the performance of InGaN-based red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers. The residual in-plane stress in the LED structure depends on the thickness of the underlying layer. Decreased residual in-plane stress resulting from the increased thickness of the underlying n-GaN layers improves the crystalline quality of the InGaN active region by allowing for a higher growth temperature. The electroluminescence intensity of the InGaN-based red LEDs is increased by a factor of 1.3 when the thickness of the underlying n-GaN layer is increased from 2 to 8 lm. Using 8-lm-thick underlying n-GaN layers, 633-nm-wavelength red LEDs are realized with a light-output power of 0.64 mW and an external quantum efficiency of 1.6% at 20 mA. The improved external quantum efficiency of the LEDs can be attributed to the lower residual in-plane stress in the underlying GaN layers.
CitationIida, D., Zhuang, Z., Kirilenko, P., Velazquez-Rizo, M., Najmi, M. A., & Ohkawa, K. (2020). 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress. Applied Physics Letters, 116(16), 162101. doi:10.1063/1.5142538
JournalApplied Physics Letters
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