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    Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

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    modulation_1.5142546.pdf
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    1.398Mb
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    PDF
    Description:
    Published version
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    Type
    Article
    Authors
    Wang, Weijie
    Chen, Jie
    Lundh, James Spencer cc
    Shervin, Shahab cc
    Oh, Seung Kyu
    Pouladi, Sara
    Rao, Zhoulyu
    Kim, Ja Yeon
    Kwon, Min-Ki
    Li, Xiaohang cc
    Choi, Sukwon cc
    Ryou, Jae-Hyun cc
    KAUST Department
    Advanced Semiconductor Laboratory
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Date
    2020-03-23
    Submitted Date
    2019-12-18
    Permanent link to this record
    http://hdl.handle.net/10754/662288
    
    Metadata
    Show full item record
    Citation
    Wang, W., Chen, J., Lundh, J. S., Shervin, S., Oh, S. K., Pouladi, S., … Ryou, J.-H. (2020). Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending. Applied Physics Letters, 116(12), 123501. doi:10.1063/1.5142546
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.5142546
    Additional Links
    http://aip.scitation.org/doi/10.1063/1.5142546
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.5142546
    Scopus Count
    Collections
    Articles; Electrical and Computer Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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