Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending
Type
ArticleAuthors
Wang, WeijieChen, Jie
Lundh, James Spencer

Shervin, Shahab

Oh, Seung Kyu
Pouladi, Sara
Rao, Zhoulyu
Kim, Ja Yeon
Kwon, Min-Ki
Li, Xiaohang

Choi, Sukwon

Ryou, Jae-Hyun

KAUST Department
Advanced Semiconductor LaboratoryComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Date
2020-03-23Submitted Date
2019-12-18Permanent link to this record
http://hdl.handle.net/10754/662288
Metadata
Show full item recordCitation
Wang, W., Chen, J., Lundh, J. S., Shervin, S., Oh, S. K., Pouladi, S., … Ryou, J.-H. (2020). Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending. Applied Physics Letters, 116(12), 123501. doi:10.1063/1.5142546Publisher
AIP PublishingJournal
Applied Physics LettersAdditional Links
http://aip.scitation.org/doi/10.1063/1.5142546ae974a485f413a2113503eed53cd6c53
10.1063/1.5142546