dc.contributor.author Mirigliano, M dc.contributor.author Decastri, D dc.contributor.author Pullia, A dc.contributor.author Dellasega, D dc.contributor.author Casu, Alberto dc.contributor.author Falqui, Andrea dc.contributor.author Milani, P dc.date.accessioned 2020-03-23T13:27:25Z dc.date.available 2020-03-23T13:27:25Z dc.date.issued 2020-03-23 dc.date.submitted 2019-10-16 dc.identifier.citation Mirigliano, M., Decastri, D., Pullia, A., Dellasega, D., Casu, A., Falqui, A., & Milani, P. (2020). Complex electrical spiking activity in resistive switching nanostructured Au two-terminal devices. Nanotechnology, 31(23), 234001. doi:10.1088/1361-6528/ab76ec dc.identifier.doi 10.1088/1361-6528/ab76ec dc.identifier.uri http://hdl.handle.net/10754/662273 dc.description.abstract Networks of nanoscale objects are the subject of increasing interest as resistive switching systems for the fabrication of neuromorphic computing architectures. Nanostructured films of bare gold clusters produced in gas phase with thickness well beyond the electrical percolation threshold, show a non-ohmic electrical behavior and resistive switching, resulting in groups of current spikes with irregular temporal organization. Here we report the systematic characterization of the temporal correlations between single spikes and spiking rate power spectrum of nanostructured Au two-terminal devices consisting of a cluster-assembled film deposited between two planar electrodes. By varying the nanostructured film thickness we fabricated two different classes of devices with high and low initial resistance respectively. We show that the switching dynamics can be described by a power law distribution in low resistance devices whereas a bi-exponential behavior is observed in the high resistance ones. The measured resistance of cluster-assembled films shows a $1/{{f}}^{{\alpha }}$ scaling behavior in the range of analyzed frequencies. Our results suggest the possibility of using cluster-assembled Au films as components for neuromorphic systems where a certain degree of stochasticity is required. dc.description.sponsorship This work has been supported by Fondazione CARIPLO under project ASSIST (2018-1726), under the Program ‘Call to support the knowledge transfer in advanced materials research’. dc.publisher IOP Publishing dc.relation.url https://iopscience.iop.org/article/10.1088/1361-6528/ab76ec dc.rights Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. dc.rights.uri http://creativecommons.org/licenses/by/4.0 dc.title Complex electrical spiking activity in resistive switching nanostructured Au two-terminal devices dc.type Article dc.contributor.department Biological and Environmental Sciences and Engineering (BESE) Division dc.contributor.department Bioscience Program dc.identifier.journal Nanotechnology dc.eprint.version Publisher's Version/PDF dc.contributor.institution CIMAINA and Department of Physics, Università degli Studi di Milano, via Celoria 16, I-20133, Milano, Italy dc.contributor.institution Department of Energy, Politecnico di Milano, via Ponzio 34/3, I-20133, Milano, Italy kaust.person Casu, Alberto kaust.person Falqui, Andrea dc.date.accepted 2020-02-17 refterms.dateFOA 2020-03-23T13:31:02Z
﻿

### Files in this item

Name:
Mirigliano_2020_Nanotechnology_31_234001.pdf
Size:
1.986Mb
Format:
PDF
Description:
Final Article

### This item appears in the following Collection(s)

Except where otherwise noted, this item's license is described as Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.