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dc.contributor.authorMirigliano, M
dc.contributor.authorDecastri, D
dc.contributor.authorPullia, A
dc.contributor.authorDellasega, D
dc.contributor.authorCasu, Alberto
dc.contributor.authorFalqui, Andrea
dc.contributor.authorMilani, P
dc.date.accessioned2020-03-23T13:27:25Z
dc.date.available2020-03-23T13:27:25Z
dc.date.issued2020-03-23
dc.date.submitted2019-10-16
dc.identifier.citationMirigliano, M., Decastri, D., Pullia, A., Dellasega, D., Casu, A., Falqui, A., & Milani, P. (2020). Complex electrical spiking activity in resistive switching nanostructured Au two-terminal devices. Nanotechnology, 31(23), 234001. doi:10.1088/1361-6528/ab76ec
dc.identifier.doi10.1088/1361-6528/ab76ec
dc.identifier.urihttp://hdl.handle.net/10754/662273
dc.description.abstractNetworks of nanoscale objects are the subject of increasing interest as resistive switching systems for the fabrication of neuromorphic computing architectures. Nanostructured films of bare gold clusters produced in gas phase with thickness well beyond the electrical percolation threshold, show a non-ohmic electrical behavior and resistive switching, resulting in groups of current spikes with irregular temporal organization. Here we report the systematic characterization of the temporal correlations between single spikes and spiking rate power spectrum of nanostructured Au two-terminal devices consisting of a cluster-assembled film deposited between two planar electrodes. By varying the nanostructured film thickness we fabricated two different classes of devices with high and low initial resistance respectively. We show that the switching dynamics can be described by a power law distribution in low resistance devices whereas a bi-exponential behavior is observed in the high resistance ones. The measured resistance of cluster-assembled films shows a $1/{{f}}^{{\alpha }}$ scaling behavior in the range of analyzed frequencies. Our results suggest the possibility of using cluster-assembled Au films as components for neuromorphic systems where a certain degree of stochasticity is required.
dc.description.sponsorshipThis work has been supported by Fondazione CARIPLO under project ASSIST (2018-1726), under the Program ‘Call to support the knowledge transfer in advanced materials research’.
dc.publisherIOP Publishing
dc.relation.urlhttps://iopscience.iop.org/article/10.1088/1361-6528/ab76ec
dc.rightsOriginal content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0
dc.titleComplex electrical spiking activity in resistive switching nanostructured Au two-terminal devices
dc.typeArticle
dc.contributor.departmentBiological and Environmental Sciences and Engineering (BESE) Division
dc.contributor.departmentBioscience Program
dc.identifier.journalNanotechnology
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionCIMAINA and Department of Physics, Università degli Studi di Milano, via Celoria 16, I-20133, Milano, Italy
dc.contributor.institutionDepartment of Energy, Politecnico di Milano, via Ponzio 34/3, I-20133, Milano, Italy
kaust.personCasu, Alberto
kaust.personFalqui, Andrea
dc.date.accepted2020-02-17
refterms.dateFOA2020-03-23T13:31:02Z


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Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Except where otherwise noted, this item's license is described as Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.