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    Spin—Based voltage comparator using spin-hall effect driven nanomagnets

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    Type
    Article
    Authors
    Wasef, S.
    Fariborzi, Hossein cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Date
    2020-03-13
    Online Publication Date
    2020-03-13
    Print Publication Date
    2020-03-01
    Submitted Date
    2019-10-31
    Permanent link to this record
    http://hdl.handle.net/10754/662197
    
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    Abstract
    In this work, we propose a spin-based voltage comparator using a hybrid spin-CMOS circuit model. In particular, we use a 3T-MTJ (three-terminal magnetic tunnel junction) model with an in-plane magnetic anisotropy (IMA) free layer employing a spin-orbit torque (SOT) based writing scheme in the thermal activation regime to demonstrate a comparator circuit with a resolution close to 50mV. The 3T-MTJ model of the comparator was validated against existing experimental results. In addition, we analyze the delay performance of the comparator along with matching the switching delay of the MTJ with an analytical model. We also discuss potential extensions to the model and general directions for future work. I. INTRODUCTION
    Citation
    Wasef, S., & Fariborzi, H. (2020). Spin—Based voltage comparator using spin-hall effect driven nanomagnets. AIP Advances, 10(3), 035116. doi:10.1063/1.5130491
    Publisher
    AIP Publishing
    Journal
    AIP Advances
    DOI
    10.1063/1.5130491
    Additional Links
    http://aip.scitation.org/doi/10.1063/1.5130491
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.5130491
    Scopus Count
    Collections
    Articles; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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