Spin—Based voltage comparator using spin-hall effect driven nanomagnets
Type
ArticleAuthors
Wasef, S.Fariborzi, Hossein

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Date
2020-03-13Online Publication Date
2020-03-13Print Publication Date
2020-03-01Submitted Date
2019-10-31Permanent link to this record
http://hdl.handle.net/10754/662197
Metadata
Show full item recordAbstract
In this work, we propose a spin-based voltage comparator using a hybrid spin-CMOS circuit model. In particular, we use a 3T-MTJ (three-terminal magnetic tunnel junction) model with an in-plane magnetic anisotropy (IMA) free layer employing a spin-orbit torque (SOT) based writing scheme in the thermal activation regime to demonstrate a comparator circuit with a resolution close to 50mV. The 3T-MTJ model of the comparator was validated against existing experimental results. In addition, we analyze the delay performance of the comparator along with matching the switching delay of the MTJ with an analytical model. We also discuss potential extensions to the model and general directions for future work. I. INTRODUCTIONCitation
Wasef, S., & Fariborzi, H. (2020). Spin—Based voltage comparator using spin-hall effect driven nanomagnets. AIP Advances, 10(3), 035116. doi:10.1063/1.5130491Publisher
AIP PublishingJournal
AIP AdvancesAdditional Links
http://aip.scitation.org/doi/10.1063/1.5130491ae974a485f413a2113503eed53cd6c53
10.1063/1.5130491