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dc.contributor.authorPak, Yusin
dc.contributor.authorMitra, Somak
dc.contributor.authorAlaal, Naresh
dc.contributor.authorXin, Bin
dc.contributor.authorLopatin, Sergei
dc.contributor.authorAlmalawi, Dhaifallah
dc.contributor.authorMin, J.-W.
dc.contributor.authorKim, H.
dc.contributor.authorKim, W.
dc.contributor.authorJung, G.-Y.
dc.contributor.authorRoqan, Iman S.
dc.date.accessioned2020-03-18T12:22:34Z
dc.date.available2020-03-18T12:22:34Z
dc.date.issued2020-03-16
dc.date.submitted2019-12-25
dc.identifier.citationPak, Y., Mitra, S., Alaal, N., Xin, B., Lopatin, S., Almalawi, D., … Roqan, I. S. (2020). Dark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector. Applied Physics Letters, 116(11), 112102. doi:10.1063/1.5143578
dc.identifier.doi10.1063/1.5143578
dc.identifier.urihttp://hdl.handle.net/10754/662194
dc.description.abstractA highly crystalline single- or few-layered 2D-MoS2 induces a high dark current, due to which an extremely small photocurrent generated by a few photons can be veiled or distorted. In this report, we show that suppression in the dark current with the enhancement in the photocurrent of a 2D-based photodetector, which is a prerequisite for photoresponse enhancement, can be achieved by constructing an ideal p-n junction based on functionalizing n-type 2D-MoS2 with p-type quantum dots (QDs). Highly crystalline solution-processed manganese oxide QDs (MnO QDs) are synthesized via the pulsed femtosecond laser ablation technique in ethanol. The ablated MnO QDs are spray-coated on an exfoliated 2D-MoS2 substrate with interdigitated Au electrodes through N2-assisted spraying. In the resulting MnO QD-decorated 2D-MoS2 photodetector with a heterojunction, dark current is reduced and is accompanied by photocurrent enhancement, thereby markedly improving the photoresponsivity and detectivity of MoS2-based devices. To elucidate the underlying mechanisms contributing to this enhancement, power- and wavelength-dependent photoresponses, along with material characterizations based on spectroscopic, chemical, morphological measurements, and analyses, are discussed.
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.5143578
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.5143578.
dc.rights.uriPublished under license by AIP Publishing
dc.titleDark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector
dc.typeArticle
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalApplied Physics Letters
dc.rights.embargodate2021-03-16
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, South Korea
dc.contributor.institutionPhysics Department, Faculty of Science, Taif University, 21974 Taif, P. O. Box 888, Saudi Arabia
kaust.personPak, Yusin
kaust.personMitra, Somak
kaust.personAlaal, Naresh
kaust.personXin, Bin
kaust.personLopatin, Sergei
kaust.personAlmalawi, Dhaifallah
kaust.personMin, J.-W.
kaust.personRoqan, Iman S.
dc.date.accepted2020-03-02
refterms.dateFOA2020-03-18T12:24:14Z


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