KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/662171
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AbstractThis chapter introduces a new class of InAs/InP based ultra-broadband Quantum-dash (Qdash) lasers. It starts by presenting the perspective of its broadband & inhomogeneous nature and the potential in energy efficient optical communication. Firstly, the epitaxial growth of InAs/InP Qdash material system and various works on optimization is discussed. Then, device level characterization of InAs/InP Qdash Fabry-Perot lasers with chronological improvement in their performance is underlined, in particular employment of assisting injection and mode locking techniques. The chapter concludes by summarizing various demonstrations of C- and L-band Qdash laser diode as a cohesive light source in wavelength division multiplexed optical communication system, and unified transmitter source for next generation optical access networks.
CitationKhan, M. Z. M., Alkhazraji, E. A., Khan, M. T. A., Ng, T. K., & Ooi, B. S. (2019). InAs/InP quantum-dash lasers. Nanoscale Semiconductor Lasers, 109–138. doi:10.1016/b978-0-12-814162-5.00005-4
SponsorsAuthors EAA, MTAK and MZMK gratefully acknowledges the support from King Fahd University of Petroleum and Minerals (KFUPM) grants, SR141002, SR161029 and KAUST004, while TKN, MZMK, and BSO acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. King Abdullah University of Science and Technology (KAUST) funding, BAS/1/1614-01-01, C/M20000-12-001-77. KCR/1/2081-01-01, and GEN/1/6607-01-01. All the authors acknowledge the funding support from KAUST-KFUPM Special Initiative (KKI) Program, EE2381 and REP/1/2878-01-01