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dc.contributor.authorHodsden, Thomas
dc.contributor.authorThorley, Karl J.
dc.contributor.authorPanidi, Julianna
dc.contributor.authorBasu, Aniruddha
dc.contributor.authorMarsh, Adam V.
dc.contributor.authorDai, Haojie
dc.contributor.authorWhite, Andrew J. P.
dc.contributor.authorWang, Changsheng
dc.contributor.authorMitchell, William
dc.contributor.authorGlöcklhofer, Florian
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorHeeney, Martin
dc.date.accessioned2020-03-03T05:32:19Z
dc.date.available2020-03-03T05:32:19Z
dc.date.issued2020-02-26
dc.date.submitted2020-01-13
dc.identifier.citationHodsden, T., Thorley, K. J., Panidi, J., Basu, A., Marsh, A. V., Dai, H., … Heeney, M. (2020). Core Fluorination Enhances Solubility and Ambient Stability of an IDT-Based n-Type Semiconductor in Transistor Devices. Advanced Functional Materials, 2000325. doi:10.1002/adfm.202000325
dc.identifier.doi10.1002/adfm.202000325
dc.identifier.urihttp://hdl.handle.net/10754/661848
dc.description.abstractThe synthesis of a novel fluorinated n-type small molecule based on an inda-cenodithiophene core is reported. Fluorination is found to have a significant impact on the physical properties, including a surprisingly dramatic improve-ment in solubility, in addition to effectively stabilizing the lowest-unoccupied molecular orbital energy (−4.24 eV). Single-crystal analysis and density func-tional theory calculations indicate the improved solubility can be attributed to backbone torsion resulting from the positioning of the fluorine group in close proximity to the strongly electron-withdrawing dicyanomethylene group. Organic thin-film transistors made via blade coating display high electron mobility (up to 0.49 cm2 V−1 s−1) along with good retention of performance in ambient conditions.
dc.description.sponsorshipThe authors thank the Engineering and Physical Sciences Research Council (EPSRC) (Grant EP/L016702/1) and the Royal Society and the Wolfson Foundation (for Royal Society Wolfson Fellowship) for support. A.B. and T.D.A. are grateful to KAUST for the financial support.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.202000325
dc.rightsArchived with thanks to Advanced Functional Materials
dc.titleCore Fluorination Enhances Solubility and Ambient Stability of an IDT-Based n-Type Semiconductor in Transistor Devices
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Functional Materials
dc.rights.embargodate2021-02-26
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Chemistry and Centre for Plastic ElectronicsWhite City CampusImperial College London London W12 0BZ UK
dc.contributor.institutionDepartment of ChemistryUniversity of Kentucky Lexington KY 40506-0055 USA
dc.contributor.institutionDepartment of Physics and Centre for Plastic ElectronicsSouth Kensington CampusImperial College London London SW7 2AZ UK
dc.contributor.institutionPerformance Materials DivisionAdvanced TechnologiesMerck Chemicals Ltd.Chilworth Technical CentreUniversity Parkway Southampton SO16 7QD UK
kaust.personBasu, Aniruddha
kaust.personAnthopoulos, Thomas D.
dc.date.accepted2020-02-05
refterms.dateFOA2020-03-05T05:20:56Z
dc.date.published-online2020-02-26
dc.date.published-print2020-04


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