Catalyst-assisted growth of InGaN NWs for photoelectrochemical water-splitting applications
KAUST DepartmentElectrical Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
Electrical Engineering Program
Online Publication Date2020-02-13
Print Publication Date2020-07
Embargo End Date2021-02-13
Permanent link to this recordhttp://hdl.handle.net/10754/661662
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AbstractIn this work, we have successfully grown InGaN nanowires by catalyst-assisted chemical vapour deposition technique with high aspect ratio for solar-driven water splitting applications. The band gap of the InGaN nanowires has been tuned to absorb a wide range of visible parts of electromagnetic spectrum by optimizing the composition of In:Ga. The photoelectrochemical analysis has been carried out for InGaN nanowires and that evidences the significant solar oxygen evolution reaction with a small onset potential of 0.234 V vs. reversible hydrogen electrode. From the analysis, it has been witnessed the maximum applied bias to photo-conversion efficiency of ~ 1% at the applied bias of 0.63 V vs. reversible hydrogen electrode. Moreover, the ultra-long stability of InGaN nanowires has been evidenced by 3000 s with a flat current density of 0.43 mA/cm2 in chronoamperometry analysis.
CitationVenkatesh, P. S., Paulraj, G., Dharmaraj, P., Purushothaman, V., & Jeganathan, K. (2020). Catalyst-assisted growth of InGaN NWs for photoelectrochemical water-splitting applications. Ionics. doi:10.1007/s11581-020-03488-7
SponsorsPSV would like to express his sincere gratitude to the College management for their financial support to develop a nanomaterials laboratory.