Catalyst-assisted growth of InGaN NWs for photoelectrochemical water-splitting applications
Type
ArticleKAUST Department
Electrical Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi ArabiaElectrical Engineering Program
Date
2020-02-13Online Publication Date
2020-02-13Print Publication Date
2020-07Embargo End Date
2021-02-13Submitted Date
2019-09-16Permanent link to this record
http://hdl.handle.net/10754/661662
Metadata
Show full item recordAbstract
In this work, we have successfully grown InGaN nanowires by catalyst-assisted chemical vapour deposition technique with high aspect ratio for solar-driven water splitting applications. The band gap of the InGaN nanowires has been tuned to absorb a wide range of visible parts of electromagnetic spectrum by optimizing the composition of In:Ga. The photoelectrochemical analysis has been carried out for InGaN nanowires and that evidences the significant solar oxygen evolution reaction with a small onset potential of 0.234 V vs. reversible hydrogen electrode. From the analysis, it has been witnessed the maximum applied bias to photo-conversion efficiency of ~ 1% at the applied bias of 0.63 V vs. reversible hydrogen electrode. Moreover, the ultra-long stability of InGaN nanowires has been evidenced by 3000 s with a flat current density of 0.43 mA/cm2 in chronoamperometry analysis.Citation
Venkatesh, P. S., Paulraj, G., Dharmaraj, P., Purushothaman, V., & Jeganathan, K. (2020). Catalyst-assisted growth of InGaN NWs for photoelectrochemical water-splitting applications. Ionics. doi:10.1007/s11581-020-03488-7Sponsors
PSV would like to express his sincere gratitude to the College management for their financial support to develop a nanomaterials laboratory.Publisher
Springer NatureJournal
IonicsAdditional Links
http://link.springer.com/10.1007/s11581-020-03488-7ae974a485f413a2113503eed53cd6c53
10.1007/s11581-020-03488-7