Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors
AuthorsHassan, Ali H.
Hota, Mrinal Kanti
Alshammari, Fwzah Hamud
Alshareef, Husam N.
Salama, Khaled N.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Functional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Sensors Lab, Advanced Membranes, and Porous Materials Center, Computer, Electrical, and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
Online Publication Date2020-02-03
Print Publication Date2020-03
Embargo End Date2021-02-03
Permanent link to this recordhttp://hdl.handle.net/10754/661494
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AbstractUsing one binary oxide, a fully transparent thin-film transistor (TFT)-based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.
CitationHassan, A. H., Hota, M. K., Alshammari, F. H., Alshareef, H. N., & Salama, K. N. (2020). Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors. Advanced Electronic Materials, 1901083. doi:10.1002/aelm.201901083
SponsorsResearch reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also thank the core laboratory staff and the imaging and characterization staff at KAUST. A.H.H. and M.K.H. contributed equally to this work.
JournalAdvanced Electronic Materials