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dc.contributor.authorPrabaswara, Aditya
dc.contributor.authorKim, Hyunho
dc.contributor.authorMin, Jung-Wook
dc.contributor.authorSubedi, Ram Chandra
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorDavaasuren, Bambar
dc.contributor.authorMoore, Kalani
dc.contributor.authorConroy, Michele
dc.contributor.authorMitra, Somak
dc.contributor.authorRoqan, Iman S.
dc.contributor.authorNg, Tien Khee
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2020-02-04T11:38:36Z
dc.date.available2020-02-04T11:38:36Z
dc.date.issued2020-01-27
dc.date.submitted2019-11-18
dc.identifier.citationPrabaswara, A., Kim, H., Min, J.-W., Subedi, R. C., Anjum, D. H., Davaasuren, B., … Ooi, B. S. (2020). Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates. ACS Nano. doi:10.1021/acsnano.9b09126
dc.identifier.doi10.1021/acsnano.9b09126
dc.identifier.urihttp://hdl.handle.net/10754/661371
dc.description.abstractGrowing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growthsubstrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as III-nitride nanowire nucleation layers capable of providing simultaneous transparency and conductivity. In this work, we demonstrate the direct epitaxial growth of GaN nanowires on Ti3C2 MXene films. The MXene films consist of nanoflakes spray coated onto an amorphous silica substrate. We observed an epitaxial relationship between the GaN nanowires and the MXene nanoflakes due to the compatibility between the triangular lattice of Ti3C2 MXene and the hexagonal structure of wurtzite GaN. The GaN nanowires on MXene show good material quality and partial transparency at visible wavelengths. Nanoscale electrical characterization using conductive atomic force microscopy reveals a Schottky barrier height of ∼330 meV between the GaN nanowire and the Ti3C2 MXene film. Our work highlights the potential of using MXene as a transparent and conductive preorienting nucleation layer for high-quality GaN growth on amorphous substrates.
dc.description.sponsorshipWe acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under grant no. KACST TIC R2-FP 008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding and MBE equipment funding nos. C/M-20000-12-001-77 and KCR/1/4055-01-01. The authors thank L.-M. Peng of Peking State University for providing the PKUMSM MATLAB script.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsnano.9b09126
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsnano.9b09126.
dc.titleTitanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalACS Nano
dc.rights.embargodate2021-01-27
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Physics, Khalifa University, Abu Dhabi, United Arab Emirates.
dc.contributor.institutionDepartment of Physics, Bernal Institute, University of Limerick, Limerick V94 T9PX, Ireland
kaust.personPrabaswara, Aditya
kaust.personKim, Hyunho
kaust.personMin, Jung-Wook
kaust.personSubedi, Ram
kaust.personAnjum, Dalaver H.
kaust.personMitra, Somak
kaust.personRoqan, Iman S.
kaust.personNg, Tien Khee
kaust.personAlshareef, Husam N.
kaust.personOoi, Boon S.
dc.date.accepted2020-01-27
dc.date.published-online2020-01-27
dc.date.published-print2020-02-25


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