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dc.contributor.authorIida, Daisuke
dc.contributor.authorZhuang, Zhe
dc.contributor.authorKirilenko, Pavel
dc.contributor.authorVelazquez-Rizo, Martin
dc.contributor.authorOhkawa, Kazuhiro
dc.date.accessioned2020-02-03T06:08:31Z
dc.date.available2020-02-03T06:08:31Z
dc.date.issued2020-02-11
dc.date.submitted2019-12-23
dc.identifier.citationIida, D., Zhuang, Z., Kirilenko, P., Velazquez-Rizo, M., & Ohkawa, K. (2020). Demonstration of low forward voltage InGaN-based red LEDs. Applied Physics Express. doi:10.35848/1882-0786/ab7168
dc.identifier.doi10.35848/1882-0786/ab7168
dc.identifier.urihttp://hdl.handle.net/10754/661352
dc.description.abstractHere we report InGaN-based red light-emitting diodes (LEDs) grown on (–201) β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light-output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.
dc.description.sponsorshipThis work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).
dc.publisherIOP Publishing
dc.relation.urlhttps://iopscience.iop.org/article/10.35848/1882-0786/ab7168
dc.relation.urlhttps://iopscience.iop.org/article/10.35848/1882-0786/ab7168/pdf
dc.rightsAs the Version of Record of this article is going to be / has been published on a gold open access basis under a CC BY 3.0 licence, this Accepted Manuscript is available for reuse under a CC BY 3.0 licence immediately.
dc.rights.urihttps://creativecommons.org/licences/by/3.0
dc.titleDemonstration of low forward voltage InGaN-based red LEDs
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalApplied Physics Express
dc.eprint.versionPublisher's Version/PDF
kaust.personIida, Daisuke
kaust.personZhuang, Zhe
kaust.personKirilenko, Pavel
kaust.personVelazquez-Rizo, Martin
kaust.personOhkawa, Kazuhiro
kaust.grant.numberBAS/1/1676-01-01
dc.date.accepted2020-01-28
refterms.dateFOA2020-02-03T06:09:05Z
dc.date.published-online2020-02-11
dc.date.published-print2020-03-01


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As the Version of Record of this article is going to be / has been published on a gold open access basis under a CC BY 3.0 licence, this Accepted Manuscript is available for reuse under a CC BY 3.0 licence immediately.
Except where otherwise noted, this item's license is described as As the Version of Record of this article is going to be / has been published on a gold open access basis under a CC BY 3.0 licence, this Accepted Manuscript is available for reuse under a CC BY 3.0 licence immediately.