KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Grant NumberBAS/1/1676-01-01
Online Publication Date2020-02-11
Print Publication Date2020-03-01
Permanent link to this recordhttp://hdl.handle.net/10754/661352
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AbstractHere we report InGaN-based red light-emitting diodes (LEDs) grown on (–201) β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light-output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.
CitationIida, D., Zhuang, Z., Kirilenko, P., Velazquez-Rizo, M., & Ohkawa, K. (2020). Demonstration of low forward voltage InGaN-based red LEDs. Applied Physics Express. doi:10.35848/1882-0786/ab7168
SponsorsThis work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).
JournalApplied Physics Express
Except where otherwise noted, this item's license is described as As the Version of Record of this article is going to be / has been published on a gold open access basis under a CC BY 3.0 licence, this Accepted Manuscript is available for reuse under a CC BY 3.0 licence immediately.