Demonstration of low forward voltage InGaN-based red LEDs
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Iida_2020_Appl._Phys._Express_13_031001.pdf
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Article
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering
Electrical Engineering Program
KAUST Grant Number
BAS/1/1676-01-01Date
2020-02-11Online Publication Date
2020-02-11Print Publication Date
2020-03-01Submitted Date
2019-12-23Permanent link to this record
http://hdl.handle.net/10754/661352Metadata
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Here we report InGaN-based red light-emitting diodes (LEDs) grown on (–201) β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light-output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.Citation
Iida, D., Zhuang, Z., Kirilenko, P., Velazquez-Rizo, M., & Ohkawa, K. (2020). Demonstration of low forward voltage InGaN-based red LEDs. Applied Physics Express. doi:10.35848/1882-0786/ab7168Sponsors
This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).Publisher
IOP PublishingJournal
Applied Physics ExpressAdditional Links
https://iopscience.iop.org/article/10.35848/1882-0786/ab7168https://iopscience.iop.org/article/10.35848/1882-0786/ab7168/pdf
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