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dc.contributor.authorXu, Xiangming
dc.contributor.authorZhang, Chenhui
dc.contributor.authorHota, Mrinal Kanti
dc.contributor.authorLiu, Zhixiong
dc.contributor.authorZhang, Xixiang
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2020-01-22T07:10:01Z
dc.date.available2020-01-22T07:10:01Z
dc.date.issued2020-01-21
dc.date.submitted2019-09-28
dc.identifier.citationXu, X., Zhang, C., Hota, M. K., Liu, Z., Zhang, X., & Alshareef, H. N. (2020). Enhanced Quality of Wafer-Scale MoS 2 Films by a Capping Layer Annealing Process. Advanced Functional Materials, 1908040. doi:10.1002/adfm.201908040
dc.identifier.doi10.1002/adfm.201908040
dc.identifier.urihttp://hdl.handle.net/10754/661120
dc.description.abstractWafer-scale, single-crystalline 2D semiconductors without grain boundaries and defects are needed for developing reliable next-generation integrated 2D electronics. Unfortunately, few literature reports exist on the growth of 2D semiconductors with single-crystalline structure at the wafer scale. It is shown that direct sulfurization of as-deposited epitaxial MoO2 films (especially, with thicknesses more than ≈5 nm) produces textured MoS2 films. This texture is inherited from the high density of defects present in the as-prepared epitaxial MoO2 film. In order to eliminate the texture of the converted MoS2 films, a new capping layer annealing process (CLAP) is introduced to improve the crystalline quality of as-deposited MoO2 films and minimize its defects. It is demonstrated that sulfurization of the CLAP-treated MoO2 films leads to the formation of single-crystalline MoS2 films, instead of textured films. It is shown that the single-crystalline MoS2 films exhibit field-effect mobility of 6.3 cm2 V−1 s−1, which is 15 times higher than that of textured MoS2. These results can be attributed to the smaller concentration of defects in the single-crystalline films.
dc.description.sponsorshipResearch reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201908040
dc.rightsArchived with thanks to Advanced Functional Materials
dc.titleEnhanced Quality of Wafer-Scale MoS 2 Films by a Capping Layer Annealing Process
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Functional Materials
dc.rights.embargodate2021-01-21
dc.eprint.versionPost-print
kaust.personXu, Xiangming
kaust.personZhang, Chenhui
kaust.personHota, Mrinal Kanti
kaust.personLiu, Zhixiong
kaust.personZhang, Xixiang
kaust.personAlshareef, Husam N.
dc.date.accepted2019-11-28
refterms.dateFOA2020-01-22T07:23:08Z
dc.date.published-online2020-01-21
dc.date.published-print2020-03


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