• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguideTheses and Dissertations LibguideSubmit an Item

    Statistics

    Display statistics

    Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    Alfaraj_2019_J._Semicond._40_121801.pdf
    Size:
    2.511Mb
    Format:
    PDF
    Download
    Type
    Article
    Authors
    Alfaraj, Nasir cc
    Min, Jung-Wook
    Kang, Chun Hong
    Alatawi, Abdullah cc
    Priante, Davide cc
    Subedi, Ram Chandra cc
    Tangi, Malleswararao cc
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering
    Electrical Engineering Program
    Photonics Laboratory
    KAUST Grant Number
    BAS/1/1614-01-01
    C/M-20000-12-001-77
    Date
    2019-12-23
    Online Publication Date
    2019-12-23
    Print Publication Date
    2019-12
    Embargo End Date
    2020-12-23
    Permanent link to this record
    http://hdl.handle.net/10754/661061
    
    Metadata
    Show full item record
    Abstract
    Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride optoelectronic devices, based on aluminum gallium nitride and boron nitride and their alloys, and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed. We emphasize wide-bandgap nitride compound semiconductors (i.e., (B, Al, Ga)N) as the deep-ultraviolet materials of interest, and two-dimensional materials, namely graphene, two-dimensional boron nitride, and two-dimensional transition metal dichalcogenides, along with gallium oxide, as the hybrid integrated materials. We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices. In this article we provide an overview of aluminum nitride, sapphire, and gallium oxide as platforms for deep-ultraviolet optoelectronic devices, in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates. A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided.
    Citation
    Alfaraj, N., Min, J.-W., Kang, C. H., Alatawi, A. A., Priante, D., Subedi, R. C., … Ooi, B. S. (2019). Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials. Journal of Semiconductors, 40(12), 121801. doi:10.1088/1674-4926/40/12/121801
    Sponsors
    We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under grant no. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding no. BAS/1/1614-01-01, and MBE equipment funding no. C/M-20000-12-001-77 and KCR/1/4055-01-01.
    Publisher
    IOP Publishing
    Journal
    Journal of Semiconductors
    DOI
    10.1088/1674-4926/40/12/121801
    Additional Links
    https://iopscience.iop.org/article/10.1088/1674-4926/40/12/121801
    ae974a485f413a2113503eed53cd6c53
    10.1088/1674-4926/40/12/121801
    Scopus Count
    Collections
    Articles; Electrical and Computer Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

    entitlement

     
    DSpace software copyright © 2002-2023  DuraSpace
    Quick Guide | Contact Us | KAUST University Library
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.