Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design
Kuo, Hao Chung
KAUST DepartmentAdvanced Semiconductor Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2019-10-22
Print Publication Date2019-12
Permanent link to this recordhttp://hdl.handle.net/10754/660988
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AbstractLow external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.
CitationChen, Q., Dai, J., Li, X., Gao, Y., Long, H., Zhang, Z.-H., … Kuo, H.-C. (2019). Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design. IEEE Electron Device Letters, 40(12), 1925–1928. doi:10.1109/led.2019.2948952
SponsorsThis work was supported in part by the National Key Research and Development Program of China under Grant 2018YFB0406602, and in part by the National Natural Science Foundation of China under Grant 11574166, Grant 61377034, and Grant 61774065.
JournalIEEE Electron Device Letters